Electronic and spintronic transport in gapped graphene-based FG/SG/FG junctions
This study delves into the transport properties of ferromagnetic-superconductor-ferromagnetic (FSF) junctions using graphene, where ferromagnetism and superconductivity are induced via proximity effect. The investigation focuses on the influence of ferromagnetic exchange energy and graphene energy b...
Saved in:
| Main Authors: | , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Semnan University
2024-07-01
|
| Series: | Progress in Physics of Applied Materials |
| Subjects: | |
| Online Access: | https://ppam.semnan.ac.ir/article_8854_c3c3a73ce42b413dfbb539568c1479da.pdf |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1841527667802767360 |
|---|---|
| author | Hossein Karbaschi Gholamreza Rashedi |
| author_facet | Hossein Karbaschi Gholamreza Rashedi |
| author_sort | Hossein Karbaschi |
| collection | DOAJ |
| description | This study delves into the transport properties of ferromagnetic-superconductor-ferromagnetic (FSF) junctions using graphene, where ferromagnetism and superconductivity are induced via proximity effect. The investigation focuses on the influence of ferromagnetic exchange energy and graphene energy bandgap. Fabricated on SiC and BN substrates, the graphene-based junctions treat charge carriers as massive relativistic particles. Utilizing a four-dimensional Dirac-Bogoliubov-de Gennes equation with tailored boundary conditions, the study calculates normal and Andreev reflection probabilities, alongside charge and spin conductances. Notably, oscillatory patterns in normal and Andreev reflection coefficients highlight the prevalence of Andreev reflection at lower energies, transitioning to normal reflection at higher energies. Conductivity trends with ferromagnetic exchange energy display a decline followed by an upturn beyond a critical point. The graphene energy bandgap notably influences Giant Magnetoresistance (GMR), with larger bandgaps yielding higher GMR magnitudes. These findings provide valuable insights into the intricate interplay among ferromagnetism, superconductivity, and graphene's electronic properties within FSF junctions. This understanding offers promising avenues for advancing graphene-based electronic and spintronic devices. |
| format | Article |
| id | doaj-art-44e0801913a247b88a57028638bc233a |
| institution | Kabale University |
| issn | 2783-4794 |
| language | English |
| publishDate | 2024-07-01 |
| publisher | Semnan University |
| record_format | Article |
| series | Progress in Physics of Applied Materials |
| spelling | doaj-art-44e0801913a247b88a57028638bc233a2025-01-15T08:13:46ZengSemnan UniversityProgress in Physics of Applied Materials2783-47942024-07-014211512110.22075/ppam.2024.34105.11008854Electronic and spintronic transport in gapped graphene-based FG/SG/FG junctionsHossein Karbaschi0Gholamreza Rashedi1Faculty of science, Mahallat Institute of Higher Education, Mahallat 37811-51958, IranDepartment of Physics, University of Isfahan, Isfahan 81746-73441, IranThis study delves into the transport properties of ferromagnetic-superconductor-ferromagnetic (FSF) junctions using graphene, where ferromagnetism and superconductivity are induced via proximity effect. The investigation focuses on the influence of ferromagnetic exchange energy and graphene energy bandgap. Fabricated on SiC and BN substrates, the graphene-based junctions treat charge carriers as massive relativistic particles. Utilizing a four-dimensional Dirac-Bogoliubov-de Gennes equation with tailored boundary conditions, the study calculates normal and Andreev reflection probabilities, alongside charge and spin conductances. Notably, oscillatory patterns in normal and Andreev reflection coefficients highlight the prevalence of Andreev reflection at lower energies, transitioning to normal reflection at higher energies. Conductivity trends with ferromagnetic exchange energy display a decline followed by an upturn beyond a critical point. The graphene energy bandgap notably influences Giant Magnetoresistance (GMR), with larger bandgaps yielding higher GMR magnitudes. These findings provide valuable insights into the intricate interplay among ferromagnetism, superconductivity, and graphene's electronic properties within FSF junctions. This understanding offers promising avenues for advancing graphene-based electronic and spintronic devices.https://ppam.semnan.ac.ir/article_8854_c3c3a73ce42b413dfbb539568c1479da.pdfgraphenetransport propertiesgmrandreev reflection |
| spellingShingle | Hossein Karbaschi Gholamreza Rashedi Electronic and spintronic transport in gapped graphene-based FG/SG/FG junctions Progress in Physics of Applied Materials graphene transport properties gmr andreev reflection |
| title | Electronic and spintronic transport in gapped graphene-based FG/SG/FG junctions |
| title_full | Electronic and spintronic transport in gapped graphene-based FG/SG/FG junctions |
| title_fullStr | Electronic and spintronic transport in gapped graphene-based FG/SG/FG junctions |
| title_full_unstemmed | Electronic and spintronic transport in gapped graphene-based FG/SG/FG junctions |
| title_short | Electronic and spintronic transport in gapped graphene-based FG/SG/FG junctions |
| title_sort | electronic and spintronic transport in gapped graphene based fg sg fg junctions |
| topic | graphene transport properties gmr andreev reflection |
| url | https://ppam.semnan.ac.ir/article_8854_c3c3a73ce42b413dfbb539568c1479da.pdf |
| work_keys_str_mv | AT hosseinkarbaschi electronicandspintronictransportingappedgraphenebasedfgsgfgjunctions AT gholamrezarashedi electronicandspintronictransportingappedgraphenebasedfgsgfgjunctions |