Ultraviolet Laser Activation of Phosphorus‐Doped Polysilicon Layers for Crystalline Silicon Solar Cells

Ultraviolet Laser Activation of Phosphorus‐Doped Polysilicon Layers for Crystalline Silicon Solar Cells

Abstract In crystalline silicon photovoltaics (c‐Si PV), a pulsed laser can be used as a substitute for a high‐temperature furnace dopant diffusion/activation step. In contrast to furnace‐based activation, lasers can be used to achieve highly localized doping with controlled dopant concentrations, u...

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Bibliographic Details
Main Authors: Yijun Wang, Di Yan, Jesus Ibarra Michel, Sanje Mahasivam, Vipul Bansal, Robert Delaney, Jiali Wang, Thien Truong, Peiting Zheng, Jie Yang, Xinyu Zhang, James Bullock
Format: Article
Language:English
Published: Wiley-VCH 2025-01-01
Series:Advanced Materials Interfaces
Subjects:
dopant activation
localized doping
poly‐Si passivating contacts
pulsed‐laser doping
Online Access:https://doi.org/10.1002/admi.202400542
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