Pre-Melting-Assisted Impurity Control of β-Ga<sub>2</sub>O<sub>3</sub> Single Crystals in Edge-Defined Film-Fed Growth
This study reveals the significant role of the pre-melting process in growing high-quality (100) β-Ga<sub>2</sub>O<sub>3</sub> single crystals from 4N powder (99.995% purity) using the edge-defined film-fed growth (EFG) method. Among various bulk melt growth methods, the EFG...
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| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2024-12-01
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| Series: | Nanomaterials |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-4991/15/1/7 |
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| Summary: | This study reveals the significant role of the pre-melting process in growing high-quality (100) β-Ga<sub>2</sub>O<sub>3</sub> single crystals from 4N powder (99.995% purity) using the edge-defined film-fed growth (EFG) method. Among various bulk melt growth methods, the EFG method boasts a fast growth rate and the capability of growing multiple crystals simultaneously, thus offering high productivity. The pre-melting process notably enhanced the structural, optical, and electrical properties of the crystals by effectively eliminating impurities such as Si and Fe. Specifically, employing a 100% CO<sub>2</sub> atmosphere during pre-melting proved to be highly effective, reducing impurity concentrations and carrier scattering, which resulted in a decreased carrier concentration and an increased electron mobility in the grown Ga<sub>2</sub>O<sub>3</sub> single crystals. These results demonstrate that pre-melting is a crucial technique for substantially improving crystal quality, thereby promising better performance in β-Ga<sub>2</sub>O<sub>3</sub>-based device applications. |
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| ISSN: | 2079-4991 |