New Technology and Development Trend of Insulated Gate Bipolar Transistors
IGBT with fine-pattern trench gate, thin drift region, field stop as well as enhanced carrier doping concentration in emitter side is the mainstream device structure at present. Meanwhile, new device structures, package technology and material are studied to improve the device performance. In this p...
Saved in:
| Main Authors: | , , , , , |
|---|---|
| Format: | Article |
| Language: | zho |
| Published: |
Editorial Office of Control and Information Technology
2017-01-01
|
| Series: | Kongzhi Yu Xinxi Jishu |
| Subjects: | |
| Online Access: | http://ctet.csrzic.com/thesisDetails#10.13889/j.issn.2095-3631.2017.05.003 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Summary: | IGBT with fine-pattern trench gate, thin drift region, field stop as well as enhanced carrier doping concentration in emitter side is the mainstream device structure at present. Meanwhile, new device structures, package technology and material are studied to improve the device performance. In this paper, the new technology and development trend of IGBT were reviewed from aspects of device structure, packaging technology, the recent development of main manufactures and new material based IGBT, etc. |
|---|---|
| ISSN: | 2096-5427 |