Optimizing charge transport in hybrid GaN-PEDOT:PSS/PMMADevice for advanced application
Abstract Organic–inorganic hybrid light-emitting devices have garnered significant attention in the last few years due to their potential. These devices integrate the superior electron mobility of inorganic semiconductors with the remarkable optoelectronic characteristics of organic semiconductors....
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2024-06-01
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author | Makram A. Fakhri Evan T. Salim Marwah R. Ketab Haneen D. Jabbar Omar A. Ibrahim Ahmad S. Azzahrani Mohammed Jalal AbdulRazzaq Raid A. Ismail Ali Basem Forat H. Alsultany Subash C. B. Gopinath |
author_facet | Makram A. Fakhri Evan T. Salim Marwah R. Ketab Haneen D. Jabbar Omar A. Ibrahim Ahmad S. Azzahrani Mohammed Jalal AbdulRazzaq Raid A. Ismail Ali Basem Forat H. Alsultany Subash C. B. Gopinath |
author_sort | Makram A. Fakhri |
collection | DOAJ |
description | Abstract Organic–inorganic hybrid light-emitting devices have garnered significant attention in the last few years due to their potential. These devices integrate the superior electron mobility of inorganic semiconductors with the remarkable optoelectronic characteristics of organic semiconductors. The inquiry focused on analyzing the optical and electrical properties of a light-emitting heterojunction that combines p-type GaN with organic materials (PEDOT, PSS, and PMMA). This heterojunction is an organic–inorganic hybrid. The procedure entailed utilizing a spin-coating technique to apply a layer of either poly(methyl methacrylate) (PMMA) or a mixture of PMMA and poly(3,4ethylenedioxythiophene)-poly(styrene sulfonate) (PEDOT: PSS) onto an indium tin oxide (ITO) substrate. Subsequently, different Nd:YAG laser pulses (200, 250, and 300 pulses) were used to administer a GaN inorganic layer onto the prepared organic layer using a pulsed laser deposition approach. Subsequently, the thermal evaporation technique was employed to deposit an aluminum electrode on the top of the organic and inorganic layers, while laser pulses were fine-tuned for optimal performance. The Hall effect investigation verifies the p-type conductivity of the GaN material. The electroluminescence studies confirmed the production of blue light by the GaN-based devices throughout a range of voltage situations, spanning from 45 to 72 V. |
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institution | Kabale University |
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language | English |
publishDate | 2024-06-01 |
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spelling | doaj-art-43c3bce320d644dcac199d61ac9979be2025-01-12T12:24:58ZengNature PortfolioScientific Reports2045-23222024-06-0114111410.1038/s41598-024-63197-3Optimizing charge transport in hybrid GaN-PEDOT:PSS/PMMADevice for advanced applicationMakram A. Fakhri0Evan T. Salim1Marwah R. Ketab2Haneen D. Jabbar3Omar A. Ibrahim4Ahmad S. Azzahrani5Mohammed Jalal AbdulRazzaq6Raid A. Ismail7Ali Basem8Forat H. Alsultany9Subash C. B. Gopinath10Laser and Optoelectronic Engineering Department, University of Technology-IraqApplied Science Department, University of Technology-IraqLaser and Optoelectronic Engineering Department, University of Technology-IraqLaser and Optoelectronic Engineering Department, University of Technology-IraqDepartment of Physics, College of Science, University of BaghdadElectrical Engineering Department, Northern Border UniversityLaser and Optoelectronic Engineering Department, University of Technology-IraqApplied Science Department, University of Technology-IraqAir Conditioning Engineering Department, Faculty of Engineering, Warith Al-Anbiyaa UniversityDepartment of Medical Physics, Al-Mustaqbal University CollegeFaculty of Chemical Engineering & Technology, Universiti Malaysia Perlis (UniMAP)Abstract Organic–inorganic hybrid light-emitting devices have garnered significant attention in the last few years due to their potential. These devices integrate the superior electron mobility of inorganic semiconductors with the remarkable optoelectronic characteristics of organic semiconductors. The inquiry focused on analyzing the optical and electrical properties of a light-emitting heterojunction that combines p-type GaN with organic materials (PEDOT, PSS, and PMMA). This heterojunction is an organic–inorganic hybrid. The procedure entailed utilizing a spin-coating technique to apply a layer of either poly(methyl methacrylate) (PMMA) or a mixture of PMMA and poly(3,4ethylenedioxythiophene)-poly(styrene sulfonate) (PEDOT: PSS) onto an indium tin oxide (ITO) substrate. Subsequently, different Nd:YAG laser pulses (200, 250, and 300 pulses) were used to administer a GaN inorganic layer onto the prepared organic layer using a pulsed laser deposition approach. Subsequently, the thermal evaporation technique was employed to deposit an aluminum electrode on the top of the organic and inorganic layers, while laser pulses were fine-tuned for optimal performance. The Hall effect investigation verifies the p-type conductivity of the GaN material. The electroluminescence studies confirmed the production of blue light by the GaN-based devices throughout a range of voltage situations, spanning from 45 to 72 V.https://doi.org/10.1038/s41598-024-63197-3Hybrid heterojunctionLight emitting diodeGaNPulsed laser deposition |
spellingShingle | Makram A. Fakhri Evan T. Salim Marwah R. Ketab Haneen D. Jabbar Omar A. Ibrahim Ahmad S. Azzahrani Mohammed Jalal AbdulRazzaq Raid A. Ismail Ali Basem Forat H. Alsultany Subash C. B. Gopinath Optimizing charge transport in hybrid GaN-PEDOT:PSS/PMMADevice for advanced application Scientific Reports Hybrid heterojunction Light emitting diode GaN Pulsed laser deposition |
title | Optimizing charge transport in hybrid GaN-PEDOT:PSS/PMMADevice for advanced application |
title_full | Optimizing charge transport in hybrid GaN-PEDOT:PSS/PMMADevice for advanced application |
title_fullStr | Optimizing charge transport in hybrid GaN-PEDOT:PSS/PMMADevice for advanced application |
title_full_unstemmed | Optimizing charge transport in hybrid GaN-PEDOT:PSS/PMMADevice for advanced application |
title_short | Optimizing charge transport in hybrid GaN-PEDOT:PSS/PMMADevice for advanced application |
title_sort | optimizing charge transport in hybrid gan pedot pss pmmadevice for advanced application |
topic | Hybrid heterojunction Light emitting diode GaN Pulsed laser deposition |
url | https://doi.org/10.1038/s41598-024-63197-3 |
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