Niobium‐Doped Titanium Dioxide: Effect of Conductivity on Metal‐Semiconductor Tribovoltaic Devices
Abstract Tribovoltaic devices have emerged as promising technologies for converting mechanical motion to electricity via surface charge generation. To maximize the electromechanical conversion of tribovoltaic devices, conventional literature has focussed on engineering a large difference in work fun...
Saved in:
| Main Authors: | , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Wiley-VCH
2025-01-01
|
| Series: | Advanced Materials Interfaces |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/admi.202400567 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1841560955777974272 |
|---|---|
| author | Kaspars Mālnieks Sabīna Kļimenko Peter C. Sherrell Anatolijs Šarakovskis Raivis Eglītis Krišjānis Šmits Artis Linarts Andris Šutka |
| author_facet | Kaspars Mālnieks Sabīna Kļimenko Peter C. Sherrell Anatolijs Šarakovskis Raivis Eglītis Krišjānis Šmits Artis Linarts Andris Šutka |
| author_sort | Kaspars Mālnieks |
| collection | DOAJ |
| description | Abstract Tribovoltaic devices have emerged as promising technologies for converting mechanical motion to electricity via surface charge generation. To maximize the electromechanical conversion of tribovoltaic devices, conventional literature has focussed on engineering a large difference in work functions between the contact materials. However, recent reports suggest that other factors beyond work function, such as temperature, play a key role in electromechanical conversion. Herein, TiO2 (a cheap, abundant oxide material) is doped with Nb5+, resulting in an improved tribovoltaic performance up to 65 times. This is attributed to an enhancement in the TiO2 film conductivity arising from Nb5+ doping. Further, it is shown that this improvement holds over cm2 scale testing. This work demonstrates the importance of considering a range of factors, particularly conductivity, when designing tribovoltaic devices and may be adopted broadly for optimal electromechanical conversion. |
| format | Article |
| id | doaj-art-4330169d63df4d5e870c368f3474ee51 |
| institution | Kabale University |
| issn | 2196-7350 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Materials Interfaces |
| spelling | doaj-art-4330169d63df4d5e870c368f3474ee512025-01-03T08:39:29ZengWiley-VCHAdvanced Materials Interfaces2196-73502025-01-01121n/an/a10.1002/admi.202400567Niobium‐Doped Titanium Dioxide: Effect of Conductivity on Metal‐Semiconductor Tribovoltaic DevicesKaspars Mālnieks0Sabīna Kļimenko1Peter C. Sherrell2Anatolijs Šarakovskis3Raivis Eglītis4Krišjānis Šmits5Artis Linarts6Andris Šutka7Institute of Materials and Surface Engineering Faculty of Natural Sciences and Technology Riga Technical University Riga LV‐1048 LatviaInstitute of Materials and Surface Engineering Faculty of Natural Sciences and Technology Riga Technical University Riga LV‐1048 LatviaSchool of Science RMIT University Melbourne 3000 AustraliaInstitute of Solid State Physics University of Latvia Riga LV‐1063 LatviaInstitute of Materials and Surface Engineering Faculty of Natural Sciences and Technology Riga Technical University Riga LV‐1048 LatviaInstitute of Solid State Physics University of Latvia Riga LV‐1063 LatviaInstitute of Technical Physics Faculty of Natural Sciences and Technology Riga Technical University Riga LV‐1048 LatviaInstitute of Materials and Surface Engineering Faculty of Natural Sciences and Technology Riga Technical University Riga LV‐1048 LatviaAbstract Tribovoltaic devices have emerged as promising technologies for converting mechanical motion to electricity via surface charge generation. To maximize the electromechanical conversion of tribovoltaic devices, conventional literature has focussed on engineering a large difference in work functions between the contact materials. However, recent reports suggest that other factors beyond work function, such as temperature, play a key role in electromechanical conversion. Herein, TiO2 (a cheap, abundant oxide material) is doped with Nb5+, resulting in an improved tribovoltaic performance up to 65 times. This is attributed to an enhancement in the TiO2 film conductivity arising from Nb5+ doping. Further, it is shown that this improvement holds over cm2 scale testing. This work demonstrates the importance of considering a range of factors, particularly conductivity, when designing tribovoltaic devices and may be adopted broadly for optimal electromechanical conversion.https://doi.org/10.1002/admi.202400567energy harvestingmetal‐semiconductor junctionniobiumtitanium dioxidetribovoltaic |
| spellingShingle | Kaspars Mālnieks Sabīna Kļimenko Peter C. Sherrell Anatolijs Šarakovskis Raivis Eglītis Krišjānis Šmits Artis Linarts Andris Šutka Niobium‐Doped Titanium Dioxide: Effect of Conductivity on Metal‐Semiconductor Tribovoltaic Devices Advanced Materials Interfaces energy harvesting metal‐semiconductor junction niobium titanium dioxide tribovoltaic |
| title | Niobium‐Doped Titanium Dioxide: Effect of Conductivity on Metal‐Semiconductor Tribovoltaic Devices |
| title_full | Niobium‐Doped Titanium Dioxide: Effect of Conductivity on Metal‐Semiconductor Tribovoltaic Devices |
| title_fullStr | Niobium‐Doped Titanium Dioxide: Effect of Conductivity on Metal‐Semiconductor Tribovoltaic Devices |
| title_full_unstemmed | Niobium‐Doped Titanium Dioxide: Effect of Conductivity on Metal‐Semiconductor Tribovoltaic Devices |
| title_short | Niobium‐Doped Titanium Dioxide: Effect of Conductivity on Metal‐Semiconductor Tribovoltaic Devices |
| title_sort | niobium doped titanium dioxide effect of conductivity on metal semiconductor tribovoltaic devices |
| topic | energy harvesting metal‐semiconductor junction niobium titanium dioxide tribovoltaic |
| url | https://doi.org/10.1002/admi.202400567 |
| work_keys_str_mv | AT kasparsmalnieks niobiumdopedtitaniumdioxideeffectofconductivityonmetalsemiconductortribovoltaicdevices AT sabinaklimenko niobiumdopedtitaniumdioxideeffectofconductivityonmetalsemiconductortribovoltaicdevices AT petercsherrell niobiumdopedtitaniumdioxideeffectofconductivityonmetalsemiconductortribovoltaicdevices AT anatolijssarakovskis niobiumdopedtitaniumdioxideeffectofconductivityonmetalsemiconductortribovoltaicdevices AT raiviseglitis niobiumdopedtitaniumdioxideeffectofconductivityonmetalsemiconductortribovoltaicdevices AT krisjanissmits niobiumdopedtitaniumdioxideeffectofconductivityonmetalsemiconductortribovoltaicdevices AT artislinarts niobiumdopedtitaniumdioxideeffectofconductivityonmetalsemiconductortribovoltaicdevices AT andrissutka niobiumdopedtitaniumdioxideeffectofconductivityonmetalsemiconductortribovoltaicdevices |