A Laterally Excited Bulk Acoustic Wave Resonator Based on LiNbO<sub>3</sub> with Arc-Shaped Electrodes
High frequency and large bandwidth are growing trends in communication radio-frequency devices. The LiNbO<sub>3</sub> thin film material is expected to become the preferred piezoelectric material for high coupling resonators in the 5G frequency band due to its ultra-high piezoelectric co...
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| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2024-11-01
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| Series: | Micromachines |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2072-666X/15/11/1367 |
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| Summary: | High frequency and large bandwidth are growing trends in communication radio-frequency devices. The LiNbO<sub>3</sub> thin film material is expected to become the preferred piezoelectric material for high coupling resonators in the 5G frequency band due to its ultra-high piezoelectric coefficient and low loss characteristics. The main mode of laterally excited bulk acoustic wave resonators (XBAR) have an ultra-high sound velocity, which enables high-frequency applications. However, the interference of spurious modes is one of the main reasons hindering the widespread application of XBAR. In this paper, a Z-cut LiNbO<sub>3</sub> thin film-based XBAR with arc-shaped electrodes is presented. We investigate the electric field distribution of the XBAR, while the irregular boundary of the arc-shaped electrodes affects the electric field between the existing interdigital transducers (IDTs). The mode shapes and impedance response of the XBAR with arc-shaped electrodes and the XBARs with traditional IDTs are compared in this work. The fabricated XBAR on a 350 nm Z-cut LiNbO<sub>3</sub> thin film with arc-shaped electrodes operating at over 5 GHz achieves a high effective electromechanical coupling coefficient of 29.8% and the spurious modes are well suppressed. This work promotes an XBAR with an optimized electrode design to further achieve the desired performance. |
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| ISSN: | 2072-666X |