Strain-free thin film growth of vanadium dioxide deposited on 2D atomic layered material of hexagonal boron nitride investigated by their thickness dependence of insulator–metal transition behavior

Strain-free thin film growth of vanadium dioxide deposited on 2D atomic layered material of hexagonal boron nitride investigated by their thickness dependence of insulator–metal transition behavior

We report on the preparation of vanadium dioxide (VO _2 ) ultrathin films on hexagonal boron nitride (hBN), which is a typical two-dimensional material, to show clear metal–insulator transition owing to weak van der Waals interaction at their surface. It is confirmed that VO _2 films on hBN with thi...

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Bibliographic Details
Main Authors: Boyuan Yu, Shingo Genchi, Kenji Watanabe, Takashi Taniguchi, Hidekazu Tanaka
Format: Article
Language:English
Published: IOP Publishing 2025-01-01
Series:Applied Physics Express
Subjects:
VO2
hBN
insulator-metal transition
strain free heterostructure
Online Access:https://doi.org/10.35848/1882-0786/adaf09
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