A Near Room Temperature Curie Temperature in a New Type of Diluted Magnetic Semiconductor (Ba,K)(Zn,Mn)2As2
Abstract Achieving room‐temperature ferromagnetism is one of the major challenges for diluted magnetic semiconductors (DMS). (Ba,K)(Zn,Mn)2As2 (BZA) belongs to a new type of DMS materials that feature independent spin and carrier doping. In previous studies, BZA shows a reliable Curie temperature (T...
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| Format: | Article |
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Wiley-VCH
2025-01-01
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| Series: | Advanced Physics Research |
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| Online Access: | https://doi.org/10.1002/apxr.202400124 |
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| author | Yi Peng Xiang Li Luchuan Shi Guoqiang Zhao Jun Zhang Jianfa Zhao Xiancheng Wang Bo Gu Zheng Deng Yasutomo J. Uemura Changqing Jin |
| author_facet | Yi Peng Xiang Li Luchuan Shi Guoqiang Zhao Jun Zhang Jianfa Zhao Xiancheng Wang Bo Gu Zheng Deng Yasutomo J. Uemura Changqing Jin |
| author_sort | Yi Peng |
| collection | DOAJ |
| description | Abstract Achieving room‐temperature ferromagnetism is one of the major challenges for diluted magnetic semiconductors (DMS). (Ba,K)(Zn,Mn)2As2 (BZA) belongs to a new type of DMS materials that feature independent spin and carrier doping. In previous studies, BZA shows a reliable Curie temperature (TC) of 230 K, a record among these types of materials. In this work, progress in further experimentally enhancing TC of BZA to 260 K is reported by increasing Mn concentration with parallel K doping, as supported by complementary first‐principles calculations. A sufficient carrier concentration can suppress the short‐range antiferromagnetic interaction of the nearest Mn─Mn pair, which suppresses ferromagnetism in DMS materials. Consequently, a higher TC has been obtained in BZA with improved Mn‐ and K‐doping levels by using high‐pressure synthesis that effectively eliminates structural distortion and overcomes the limitation of chemical solution in BZA. The work demonstrates an effective strategy to enhance TC in DMS systems. |
| format | Article |
| id | doaj-art-423d83e746f047fdbd9ba84950333ac9 |
| institution | Kabale University |
| issn | 2751-1200 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Physics Research |
| spelling | doaj-art-423d83e746f047fdbd9ba84950333ac92025-01-10T12:23:42ZengWiley-VCHAdvanced Physics Research2751-12002025-01-0141n/an/a10.1002/apxr.202400124A Near Room Temperature Curie Temperature in a New Type of Diluted Magnetic Semiconductor (Ba,K)(Zn,Mn)2As2Yi Peng0Xiang Li1Luchuan Shi2Guoqiang Zhao3Jun Zhang4Jianfa Zhao5Xiancheng Wang6Bo Gu7Zheng Deng8Yasutomo J. Uemura9Changqing Jin10Institute of Physics Chinese Academy of Sciences Beijing 100190 ChinaKavli Institute for Theoretical Sciences University of Chinese Academy of Sciences Beijing 100190 ChinaInstitute of Physics Chinese Academy of Sciences Beijing 100190 ChinaInstitute of Physics Chinese Academy of Sciences Beijing 100190 ChinaInstitute of Physics Chinese Academy of Sciences Beijing 100190 ChinaInstitute of Physics Chinese Academy of Sciences Beijing 100190 ChinaInstitute of Physics Chinese Academy of Sciences Beijing 100190 ChinaKavli Institute for Theoretical Sciences University of Chinese Academy of Sciences Beijing 100190 ChinaInstitute of Physics Chinese Academy of Sciences Beijing 100190 ChinaDepartment of Physics Columbia University New York NY 10027 USAInstitute of Physics Chinese Academy of Sciences Beijing 100190 ChinaAbstract Achieving room‐temperature ferromagnetism is one of the major challenges for diluted magnetic semiconductors (DMS). (Ba,K)(Zn,Mn)2As2 (BZA) belongs to a new type of DMS materials that feature independent spin and carrier doping. In previous studies, BZA shows a reliable Curie temperature (TC) of 230 K, a record among these types of materials. In this work, progress in further experimentally enhancing TC of BZA to 260 K is reported by increasing Mn concentration with parallel K doping, as supported by complementary first‐principles calculations. A sufficient carrier concentration can suppress the short‐range antiferromagnetic interaction of the nearest Mn─Mn pair, which suppresses ferromagnetism in DMS materials. Consequently, a higher TC has been obtained in BZA with improved Mn‐ and K‐doping levels by using high‐pressure synthesis that effectively eliminates structural distortion and overcomes the limitation of chemical solution in BZA. The work demonstrates an effective strategy to enhance TC in DMS systems.https://doi.org/10.1002/apxr.202400124diluted magnetic semiconductorshigh Curie temperatureindependent spin and carrier doping |
| spellingShingle | Yi Peng Xiang Li Luchuan Shi Guoqiang Zhao Jun Zhang Jianfa Zhao Xiancheng Wang Bo Gu Zheng Deng Yasutomo J. Uemura Changqing Jin A Near Room Temperature Curie Temperature in a New Type of Diluted Magnetic Semiconductor (Ba,K)(Zn,Mn)2As2 Advanced Physics Research diluted magnetic semiconductors high Curie temperature independent spin and carrier doping |
| title | A Near Room Temperature Curie Temperature in a New Type of Diluted Magnetic Semiconductor (Ba,K)(Zn,Mn)2As2 |
| title_full | A Near Room Temperature Curie Temperature in a New Type of Diluted Magnetic Semiconductor (Ba,K)(Zn,Mn)2As2 |
| title_fullStr | A Near Room Temperature Curie Temperature in a New Type of Diluted Magnetic Semiconductor (Ba,K)(Zn,Mn)2As2 |
| title_full_unstemmed | A Near Room Temperature Curie Temperature in a New Type of Diluted Magnetic Semiconductor (Ba,K)(Zn,Mn)2As2 |
| title_short | A Near Room Temperature Curie Temperature in a New Type of Diluted Magnetic Semiconductor (Ba,K)(Zn,Mn)2As2 |
| title_sort | near room temperature curie temperature in a new type of diluted magnetic semiconductor ba k zn mn 2as2 |
| topic | diluted magnetic semiconductors high Curie temperature independent spin and carrier doping |
| url | https://doi.org/10.1002/apxr.202400124 |
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