Sensitivity Analysis of Biosensor-Based SiGe Source Dual Gate Tunnel FET Having Negative Capacitance

Sensitivity Analysis of Biosensor-Based SiGe Source Dual Gate Tunnel FET Having Negative Capacitance

This work proposes a unique design of charge plasma based junctionless SiGe source TFET with dual cavity and ferroelectric gate dielectric. The biosensor works on the principle of dielectric modulation for label-free detection, where the cavity lies under the source and gate metal just around the tu...

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Bibliographic Details
Main Authors: Dipshika Das, Rudra Sankar Dhar, Pradip Kumar Ghosh, Yash Sharma, Amit Banerjee
Format: Article
Language:English
Published: IEEE 2025-01-01
Series:IEEE Access
Subjects:
Biosensor
charge plasma
dielectric modulation
sensitivity
heterojunction
dual gate
Online Access:https://ieeexplore.ieee.org/document/10830522/
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