A New Hall Microdevice with Minimal Complexity

A new Hall microdevice with minimal complexity and orthogonal magnetic field activation is suggested. The microsensor contains a rectangular <i>n</i>-type silicon substrate. On the long sides, three ohmic contacts are formed symmetrically and opposite each other. The first two opposite e...

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Main Authors: Siya Lozanova, Avgust Ivanov, Martin Ralchev, Chavdar Roumenin
Format: Article
Language:English
Published: MDPI AG 2024-03-01
Series:Proceedings
Subjects:
Online Access:https://www.mdpi.com/2504-3900/97/1/117
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_version_ 1846102990186872832
author Siya Lozanova
Avgust Ivanov
Martin Ralchev
Chavdar Roumenin
author_facet Siya Lozanova
Avgust Ivanov
Martin Ralchev
Chavdar Roumenin
author_sort Siya Lozanova
collection DOAJ
description A new Hall microdevice with minimal complexity and orthogonal magnetic field activation is suggested. The microsensor contains a rectangular <i>n</i>-type silicon substrate. On the long sides, three ohmic contacts are formed symmetrically and opposite each other. The first two opposite electrodes are connected and the second two are fed in the same way, and third ones are the outputs. The increased sensitivity constituting 40 V/AT is due to the reduced parasitic surface currents. Furthermore, output electrodes are moved out of the area where the supply currents flow. The 80 × 135 μm<sup>2</sup> size of the sensor increases the resolution and provides detailed mapping of the magnetic field’s topology.
format Article
id doaj-art-40ae77fb548749489741f8034d3bf54f
institution Kabale University
issn 2504-3900
language English
publishDate 2024-03-01
publisher MDPI AG
record_format Article
series Proceedings
spelling doaj-art-40ae77fb548749489741f8034d3bf54f2024-12-27T14:48:52ZengMDPI AGProceedings2504-39002024-03-0197111710.3390/proceedings2024097117A New Hall Microdevice with Minimal ComplexitySiya Lozanova0Avgust Ivanov1Martin Ralchev2Chavdar Roumenin3Institute of Robotics at Bulgarian Academy of Sciences, 1113 Sofia, BulgariaInstitute of Robotics at Bulgarian Academy of Sciences, 1113 Sofia, BulgariaInstitute of Robotics at Bulgarian Academy of Sciences, 1113 Sofia, BulgariaInstitute of Robotics at Bulgarian Academy of Sciences, 1113 Sofia, BulgariaA new Hall microdevice with minimal complexity and orthogonal magnetic field activation is suggested. The microsensor contains a rectangular <i>n</i>-type silicon substrate. On the long sides, three ohmic contacts are formed symmetrically and opposite each other. The first two opposite electrodes are connected and the second two are fed in the same way, and third ones are the outputs. The increased sensitivity constituting 40 V/AT is due to the reduced parasitic surface currents. Furthermore, output electrodes are moved out of the area where the supply currents flow. The 80 × 135 μm<sup>2</sup> size of the sensor increases the resolution and provides detailed mapping of the magnetic field’s topology.https://www.mdpi.com/2504-3900/97/1/117Hall effectvertical Hall elementorthogonal Hall configurationsensor characteristics
spellingShingle Siya Lozanova
Avgust Ivanov
Martin Ralchev
Chavdar Roumenin
A New Hall Microdevice with Minimal Complexity
Proceedings
Hall effect
vertical Hall element
orthogonal Hall configuration
sensor characteristics
title A New Hall Microdevice with Minimal Complexity
title_full A New Hall Microdevice with Minimal Complexity
title_fullStr A New Hall Microdevice with Minimal Complexity
title_full_unstemmed A New Hall Microdevice with Minimal Complexity
title_short A New Hall Microdevice with Minimal Complexity
title_sort new hall microdevice with minimal complexity
topic Hall effect
vertical Hall element
orthogonal Hall configuration
sensor characteristics
url https://www.mdpi.com/2504-3900/97/1/117
work_keys_str_mv AT siyalozanova anewhallmicrodevicewithminimalcomplexity
AT avgustivanov anewhallmicrodevicewithminimalcomplexity
AT martinralchev anewhallmicrodevicewithminimalcomplexity
AT chavdarroumenin anewhallmicrodevicewithminimalcomplexity
AT siyalozanova newhallmicrodevicewithminimalcomplexity
AT avgustivanov newhallmicrodevicewithminimalcomplexity
AT martinralchev newhallmicrodevicewithminimalcomplexity
AT chavdarroumenin newhallmicrodevicewithminimalcomplexity