Surface Characteristics and Performance Optimization of W-Doped Vanadium Dioxide Thin Films
This study explores the surface characteristics evaluation and performance optimization of tungsten (W)-doped vanadium dioxide (VO<sub>2</sub>) thin films. W-doped vanadium dioxide films were deposited on B270 glass substrates using an electron beam evaporation technique combined with th...
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| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2024-12-01
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| Series: | Surfaces |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2571-9637/7/4/73 |
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| Summary: | This study explores the surface characteristics evaluation and performance optimization of tungsten (W)-doped vanadium dioxide (VO<sub>2</sub>) thin films. W-doped vanadium dioxide films were deposited on B270 glass substrates using an electron beam evaporation technique combined with the ion beam-assisted deposition (IAD) method. The Taguchi method was used to analyze the performance optimization of VO<sub>2</sub> thin films, and L<sub>16</sub> orthogonal array design and Minitab software were used for optimization calculations. The surface roughness, visible light transmittance, infrared transmittance, and residual stress of un-doped and tungsten-doped (3–5%) VO<sub>2</sub> thin films are set as the quality performance indicators of thin films. The goal is to identify the key factors that affect the performance of VO<sub>2</sub> thin films during deposition and optimize their process parameters. The experimental results showed that a VO<sub>2</sub> thin film with 3% tungsten doping, an oxygen flow rate of 60 sccm, a heating temperature of 280 °C, and a film thickness of 60 nm exhibited the lowest surface roughness of 2.12 nm. A VO<sub>2</sub> thin film with 5% tungsten doping, an oxygen flow rate of 0 sccm, a heating temperature of 280 °C, and a film thickness of 60 nm had the highest visible light transmittance at 64.33%. When the oxygen flow rate was 60 sccm, the heating temperature was 295 °C, the film thickness was 150 nm, and the tungsten doping was 5%, the VO<sub>2</sub> thin film showed the lowest infrared transmittance of 31.34%. A thin film with 5% tungsten doping, an oxygen flow rate of 20 sccm, a heating temperature of 265 °C, and a film thickness of 120 nm exhibited the lowest residual stress of −0.195 GPa. |
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| ISSN: | 2571-9637 |