Different Nucleation Mechanisms during Atomic Layer Deposition of HfS2 on Cobalt Oxide Surfaces
Abstract The atomic layer deposition (ALD) of HfS2 is investigated on atomically defined CoO(100) and CoO(111) surfaces under ultrahigh‐vacuum (UHV) conditions. The ALD process is performed by sequential dosing of the precursors tetrakis(dimethylamido)hafnium (TDMAH) and deuterium sulfide (D2S) sepa...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley-VCH
2025-01-01
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| Series: | Advanced Materials Interfaces |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/admi.202400371 |
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