High-Performance Multilevel and Ambipolar Nonvolatile Organic Transistor Memory Using Small-Molecule SFDBAO and PS as Charge Trapping Elements

High-Performance Multilevel and Ambipolar Nonvolatile Organic Transistor Memory Using Small-Molecule SFDBAO and PS as Charge Trapping Elements

Organic nonvolatile transistor memories (ONVMs) using a hybrid spiro [fluorene-9,7′-dibenzo [c, h] acridine]-5′-one (SFDBAO)/polystyrene (PS) film as bulk-heterojunction-like tunneling and trapping elements were fabricated. From the characterization of the 10% SFDBAO/PS based on ONVM, a sterically h...

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Bibliographic Details
Main Authors: Lingzhi Jin, Wenjuan Xu, Yangzhou Qian, Tao Ji, Kefan Wu, Liang Huang, Feng Chen, Nanchang Huang, Shu Xing, Zhen Shao, Wen Li, Yuyu Liu, Linghai Xie
Format: Article
Language:English
Published: MDPI AG 2025-07-01
Series:Nanomaterials
Subjects:
nonvolatile transistor memory
small-molecule materials
charge trapping elements
Online Access:https://www.mdpi.com/2079-4991/15/14/1072
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