Performance Improvement of GaN-Based Vertical-Cavity Surface-Emitting Lasers by Using Tapered SiO<sub>2</sub>-Buried Structure
In GaN-based vertical-cavity surface-emitting lasers (VCSELs) with insulator-buried structure, the strong index guiding will introduce higher order modes. In this paper, we present a novel GaN-based VCSEL with a tapered SiO<sub>2</sub>-buried structure by numerical simulations. Compared...
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| Format: | Article |
| Language: | English |
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IEEE
2025-01-01
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| Series: | IEEE Photonics Journal |
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| Online Access: | https://ieeexplore.ieee.org/document/10815608/ |
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| author | Rongbin Xu Yachao Wang Mingchao Fang Yang Mei Leiying Ying Daquan Yu Baoping Zhang |
| author_facet | Rongbin Xu Yachao Wang Mingchao Fang Yang Mei Leiying Ying Daquan Yu Baoping Zhang |
| author_sort | Rongbin Xu |
| collection | DOAJ |
| description | In GaN-based vertical-cavity surface-emitting lasers (VCSELs) with insulator-buried structure, the strong index guiding will introduce higher order modes. In this paper, we present a novel GaN-based VCSEL with a tapered SiO<sub>2</sub>-buried structure by numerical simulations. Compared to conventional flat aperture VCSELs, tapered aperture VCSELs show the lower threshold current and higher slope efficiency, and can be attributed to the improvement of current distribution within the current injection aperture. Moreover, by adjusting the taper length, the current distribution in current injection aperture can be further changed, enabling single fundamental mode lasing. Additionally, the modulation bandwidth for tapered aperture VCSELs will also increase due to the reduction of parasitic capacitance. This research guides the development of high performance GaN VCSELs capable of achieving single transverse mode and high modulation rates for visible optical communication links and networks. |
| format | Article |
| id | doaj-art-3d53133f8bb14d4bb5078a88e02e8d3a |
| institution | Kabale University |
| issn | 1943-0655 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Photonics Journal |
| spelling | doaj-art-3d53133f8bb14d4bb5078a88e02e8d3a2025-01-09T00:00:18ZengIEEEIEEE Photonics Journal1943-06552025-01-011711510.1109/JPHOT.2024.352249810815608Performance Improvement of GaN-Based Vertical-Cavity Surface-Emitting Lasers by Using Tapered SiO<sub>2</sub>-Buried StructureRongbin Xu0https://orcid.org/0000-0003-1041-4293Yachao Wang1Mingchao Fang2Yang Mei3https://orcid.org/0000-0001-7190-0338Leiying Ying4Daquan Yu5https://orcid.org/0000-0001-8065-2612Baoping Zhang6https://orcid.org/0000-0001-9537-5179School of Electronic Science and Engineering, Xiamen University, Xiamen, ChinaSchool of Electronic Science and Engineering, Xiamen University, Xiamen, ChinaSchool of Electronic Science and Engineering, Xiamen University, Xiamen, ChinaSchool of Electronic Science and Engineering, Xiamen University, Xiamen, ChinaSchool of Electronic Science and Engineering, Xiamen University, Xiamen, ChinaSchool of Electronic Science and Engineering, Xiamen University, Xiamen, ChinaSchool of Electronic Science and Engineering, Xiamen University, Xiamen, ChinaIn GaN-based vertical-cavity surface-emitting lasers (VCSELs) with insulator-buried structure, the strong index guiding will introduce higher order modes. In this paper, we present a novel GaN-based VCSEL with a tapered SiO<sub>2</sub>-buried structure by numerical simulations. Compared to conventional flat aperture VCSELs, tapered aperture VCSELs show the lower threshold current and higher slope efficiency, and can be attributed to the improvement of current distribution within the current injection aperture. Moreover, by adjusting the taper length, the current distribution in current injection aperture can be further changed, enabling single fundamental mode lasing. Additionally, the modulation bandwidth for tapered aperture VCSELs will also increase due to the reduction of parasitic capacitance. This research guides the development of high performance GaN VCSELs capable of achieving single transverse mode and high modulation rates for visible optical communication links and networks.https://ieeexplore.ieee.org/document/10815608/GaN-based lasernumerical simulationvertical-cavity surface-emitting laser (VCSEL)tapered aperturemodulation response |
| spellingShingle | Rongbin Xu Yachao Wang Mingchao Fang Yang Mei Leiying Ying Daquan Yu Baoping Zhang Performance Improvement of GaN-Based Vertical-Cavity Surface-Emitting Lasers by Using Tapered SiO<sub>2</sub>-Buried Structure IEEE Photonics Journal GaN-based laser numerical simulation vertical-cavity surface-emitting laser (VCSEL) tapered aperture modulation response |
| title | Performance Improvement of GaN-Based Vertical-Cavity Surface-Emitting Lasers by Using Tapered SiO<sub>2</sub>-Buried Structure |
| title_full | Performance Improvement of GaN-Based Vertical-Cavity Surface-Emitting Lasers by Using Tapered SiO<sub>2</sub>-Buried Structure |
| title_fullStr | Performance Improvement of GaN-Based Vertical-Cavity Surface-Emitting Lasers by Using Tapered SiO<sub>2</sub>-Buried Structure |
| title_full_unstemmed | Performance Improvement of GaN-Based Vertical-Cavity Surface-Emitting Lasers by Using Tapered SiO<sub>2</sub>-Buried Structure |
| title_short | Performance Improvement of GaN-Based Vertical-Cavity Surface-Emitting Lasers by Using Tapered SiO<sub>2</sub>-Buried Structure |
| title_sort | performance improvement of gan based vertical cavity surface emitting lasers by using tapered sio sub 2 sub buried structure |
| topic | GaN-based laser numerical simulation vertical-cavity surface-emitting laser (VCSEL) tapered aperture modulation response |
| url | https://ieeexplore.ieee.org/document/10815608/ |
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