Novel 2D/3D Heterojunction for UV Light‐Emitting Diodes Using Hexagonal Boron Nitride as Hole Injection Layer
The AlGaN materials system has been extensively studied in order to improve the efficiency of UV‐B and UV‐C light‐emitting diodes (LEDs). While progress has been made, significant challenges remain at shorter wavelengths. Most notably, increased Al composition for shorter‐wavelength operation result...
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| Main Authors: | , , , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley-VCH
2025-02-01
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| Series: | Advanced Photonics Research |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/adpr.202400092 |
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