Influence of Device Design Parameters on Static and Dynamic Performances of Trench Gate IGBT
Significant progress has been made by combining trench gate cell design and field stop (or SPT) buffer concept in modern IGBT technology. In this paper, we explored the different device design parameters that could be optimised to obtain best-in-class static and dynamic performance of trench gate IG...
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| Main Author: | |
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| Format: | Article |
| Language: | zho |
| Published: |
Editorial Office of Control and Information Technology
2017-01-01
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| Series: | Kongzhi Yu Xinxi Jishu |
| Subjects: | |
| Online Access: | http://ctet.csrzic.com/thesisDetails#10.13889/j.issn.2095-3631.2017.05.002 |
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