Influence of Device Design Parameters on Static and Dynamic Performances of Trench Gate IGBT
Significant progress has been made by combining trench gate cell design and field stop (or SPT) buffer concept in modern IGBT technology. In this paper, we explored the different device design parameters that could be optimised to obtain best-in-class static and dynamic performance of trench gate IG...
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| Main Author: | |
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| Format: | Article |
| Language: | zho |
| Published: |
Editorial Office of Control and Information Technology
2017-01-01
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| Series: | Kongzhi Yu Xinxi Jishu |
| Subjects: | |
| Online Access: | http://ctet.csrzic.com/thesisDetails#10.13889/j.issn.2095-3631.2017.05.002 |
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| Summary: | Significant progress has been made by combining trench gate cell design and field stop (or SPT) buffer concept in modern IGBT technology. In this paper, we explored the different device design parameters that could be optimised to obtain best-in-class static and dynamic performance of trench gate IGBT in particular. This includes parameters such as active and dummy trench cell design, carrier injection enhancement, soft punch through, etc. It is shown that the parameter combination for optimisation will change depending on application needs such as low on-state voltage drop, low turn-off energy loss or ruggedness in terms of RBSOA and SCSOA. Additionally we investigated the design parameters necessary for best performance in low inductance circuits which are important in HEV/EV applications. |
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| ISSN: | 2096-5427 |