Nanometer‐Scale 1D Negative Differential Resistance Channels in Van Der Waals Layers
Abstract Negative differential resistance (NDR) is the key feature of resonant tunneling diodes exploited for high‐frequency and low‐power devices and recent studies have focused on NDR in van der Waals heterostructures and nanoscale materials. Here, strong NDR confined along a 1‐nm‐wide 1D channel...
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| Format: | Article |
| Language: | English |
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Wiley
2025-01-01
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| Series: | Advanced Science |
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| Online Access: | https://doi.org/10.1002/advs.202408090 |
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| author | Qirong Yao Jae Whan Park Choongjae Won Sang‐Wook Cheong Han Woong Yeom |
| author_facet | Qirong Yao Jae Whan Park Choongjae Won Sang‐Wook Cheong Han Woong Yeom |
| author_sort | Qirong Yao |
| collection | DOAJ |
| description | Abstract Negative differential resistance (NDR) is the key feature of resonant tunneling diodes exploited for high‐frequency and low‐power devices and recent studies have focused on NDR in van der Waals heterostructures and nanoscale materials. Here, strong NDR confined along a 1‐nm‐wide 1D channel within a van der Waals layer 1T‐TaS2 is reported. Using scanning tunneling microscopy, a double 1D NDR channel formed along the sides of a charge–density‐wave domain wall of 1T‐TaS2 is found. The density functional theory calculation elucidates that the strong local band‐bending at the domain wall and the interlayer orbital overlap cooperate to bring about 1D NDR channels. Furthermore, the NDR is well controlled by changing the tunneling junction distance. This result would be important for nanoscale device applications based on strong nonlinear resistance within van der Waals material architectures. |
| format | Article |
| id | doaj-art-3b403c2386a04e4f9e2f7d56c7e5cb81 |
| institution | Kabale University |
| issn | 2198-3844 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Advanced Science |
| spelling | doaj-art-3b403c2386a04e4f9e2f7d56c7e5cb812025-01-13T15:29:43ZengWileyAdvanced Science2198-38442025-01-01122n/an/a10.1002/advs.202408090Nanometer‐Scale 1D Negative Differential Resistance Channels in Van Der Waals LayersQirong Yao0Jae Whan Park1Choongjae Won2Sang‐Wook Cheong3Han Woong Yeom4Center for Artificial Low Dimensional Electronic Systems Institute for Basic Science (IBS) Pohang 37673 South KoreaCenter for Artificial Low Dimensional Electronic Systems Institute for Basic Science (IBS) Pohang 37673 South KoreaLaboratory for Pohang Emergent Materials Department of Physics Pohang University of Science and Technology Pohang 37673 South KoreaLaboratory for Pohang Emergent Materials Department of Physics Pohang University of Science and Technology Pohang 37673 South KoreaCenter for Artificial Low Dimensional Electronic Systems Institute for Basic Science (IBS) Pohang 37673 South KoreaAbstract Negative differential resistance (NDR) is the key feature of resonant tunneling diodes exploited for high‐frequency and low‐power devices and recent studies have focused on NDR in van der Waals heterostructures and nanoscale materials. Here, strong NDR confined along a 1‐nm‐wide 1D channel within a van der Waals layer 1T‐TaS2 is reported. Using scanning tunneling microscopy, a double 1D NDR channel formed along the sides of a charge–density‐wave domain wall of 1T‐TaS2 is found. The density functional theory calculation elucidates that the strong local band‐bending at the domain wall and the interlayer orbital overlap cooperate to bring about 1D NDR channels. Furthermore, the NDR is well controlled by changing the tunneling junction distance. This result would be important for nanoscale device applications based on strong nonlinear resistance within van der Waals material architectures.https://doi.org/10.1002/advs.2024080901T‐TaS2density‐functional calculationsinterlayer orbital overlapnegative differential resistancescanning tunneling microscopy and spectroscopy |
| spellingShingle | Qirong Yao Jae Whan Park Choongjae Won Sang‐Wook Cheong Han Woong Yeom Nanometer‐Scale 1D Negative Differential Resistance Channels in Van Der Waals Layers Advanced Science 1T‐TaS2 density‐functional calculations interlayer orbital overlap negative differential resistance scanning tunneling microscopy and spectroscopy |
| title | Nanometer‐Scale 1D Negative Differential Resistance Channels in Van Der Waals Layers |
| title_full | Nanometer‐Scale 1D Negative Differential Resistance Channels in Van Der Waals Layers |
| title_fullStr | Nanometer‐Scale 1D Negative Differential Resistance Channels in Van Der Waals Layers |
| title_full_unstemmed | Nanometer‐Scale 1D Negative Differential Resistance Channels in Van Der Waals Layers |
| title_short | Nanometer‐Scale 1D Negative Differential Resistance Channels in Van Der Waals Layers |
| title_sort | nanometer scale 1d negative differential resistance channels in van der waals layers |
| topic | 1T‐TaS2 density‐functional calculations interlayer orbital overlap negative differential resistance scanning tunneling microscopy and spectroscopy |
| url | https://doi.org/10.1002/advs.202408090 |
| work_keys_str_mv | AT qirongyao nanometerscale1dnegativedifferentialresistancechannelsinvanderwaalslayers AT jaewhanpark nanometerscale1dnegativedifferentialresistancechannelsinvanderwaalslayers AT choongjaewon nanometerscale1dnegativedifferentialresistancechannelsinvanderwaalslayers AT sangwookcheong nanometerscale1dnegativedifferentialresistancechannelsinvanderwaalslayers AT hanwoongyeom nanometerscale1dnegativedifferentialresistancechannelsinvanderwaalslayers |