MODELING OF ELECTRICAL PROPERTIES OF SOLID HETEROSTRUCTURES AND CERAMICS BASED ON SILICON CARBIDE
In this paper, methods for calculating, analyzing, and mathematical modeling of electrical properties and characteristics of structures and ceramic semiconductor materials based on silicon carbide are considered. The advantages of the MDFG method -dynamic Green functions, Kubo-Greenwood formulas, an...
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| Format: | Article |
| Language: | Russian |
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North-Caucasus Federal University
2022-08-01
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| Series: | Современная наука и инновации |
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| Online Access: | https://msi.elpub.ru/jour/article/view/178 |
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| author | A. B. Cheboksarov B. A. Kazarov V. A. Cheboksarov |
| author_facet | A. B. Cheboksarov B. A. Kazarov V. A. Cheboksarov |
| author_sort | A. B. Cheboksarov |
| collection | DOAJ |
| description | In this paper, methods for calculating, analyzing, and mathematical modeling of electrical properties and characteristics of structures and ceramic semiconductor materials based on silicon carbide are considered. The advantages of the MDFG method -dynamic Green functions, Kubo-Greenwood formulas, and their application to mesoscopic and size effects, Anderson carrier localization, Mott transitions are formulated: the giant dielectric constant gain effect (SiC-AIN), the concentration dependence of conductivity (SiC-AIN, SiC- BeO) et al. In order to conduct a detailed study of the electrical properties and characteristics of semiconductor materials, it becomes necessary to study the behavior of the dielectric constant in ceramic jets SiC-AIN textures. |
| format | Article |
| id | doaj-art-3ada33b0a1084b8d8b30e3e9f0f195b1 |
| institution | Kabale University |
| issn | 2307-910X |
| language | Russian |
| publishDate | 2022-08-01 |
| publisher | North-Caucasus Federal University |
| record_format | Article |
| series | Современная наука и инновации |
| spelling | doaj-art-3ada33b0a1084b8d8b30e3e9f0f195b12025-08-20T03:42:20ZrusNorth-Caucasus Federal UniversityСовременная наука и инновации2307-910X2022-08-010181710.33236/2307-910X-2020-1-29-8-16177MODELING OF ELECTRICAL PROPERTIES OF SOLID HETEROSTRUCTURES AND CERAMICS BASED ON SILICON CARBIDEA. B. Cheboksarov0B. A. KazarovV. A. Cheboksarov1Stavropol state pedagogical InstituteNorth-Caucasian federal universityIn this paper, methods for calculating, analyzing, and mathematical modeling of electrical properties and characteristics of structures and ceramic semiconductor materials based on silicon carbide are considered. The advantages of the MDFG method -dynamic Green functions, Kubo-Greenwood formulas, and their application to mesoscopic and size effects, Anderson carrier localization, Mott transitions are formulated: the giant dielectric constant gain effect (SiC-AIN), the concentration dependence of conductivity (SiC-AIN, SiC- BeO) et al. In order to conduct a detailed study of the electrical properties and characteristics of semiconductor materials, it becomes necessary to study the behavior of the dielectric constant in ceramic jets SiC-AIN textures.https://msi.elpub.ru/jour/article/view/178electric conductivitydielectric constantmott transitionheterostructuressilicon carbide |
| spellingShingle | A. B. Cheboksarov B. A. Kazarov V. A. Cheboksarov MODELING OF ELECTRICAL PROPERTIES OF SOLID HETEROSTRUCTURES AND CERAMICS BASED ON SILICON CARBIDE Современная наука и инновации electric conductivity dielectric constant mott transition heterostructures silicon carbide |
| title | MODELING OF ELECTRICAL PROPERTIES OF SOLID HETEROSTRUCTURES AND CERAMICS BASED ON SILICON CARBIDE |
| title_full | MODELING OF ELECTRICAL PROPERTIES OF SOLID HETEROSTRUCTURES AND CERAMICS BASED ON SILICON CARBIDE |
| title_fullStr | MODELING OF ELECTRICAL PROPERTIES OF SOLID HETEROSTRUCTURES AND CERAMICS BASED ON SILICON CARBIDE |
| title_full_unstemmed | MODELING OF ELECTRICAL PROPERTIES OF SOLID HETEROSTRUCTURES AND CERAMICS BASED ON SILICON CARBIDE |
| title_short | MODELING OF ELECTRICAL PROPERTIES OF SOLID HETEROSTRUCTURES AND CERAMICS BASED ON SILICON CARBIDE |
| title_sort | modeling of electrical properties of solid heterostructures and ceramics based on silicon carbide |
| topic | electric conductivity dielectric constant mott transition heterostructures silicon carbide |
| url | https://msi.elpub.ru/jour/article/view/178 |
| work_keys_str_mv | AT abcheboksarov modelingofelectricalpropertiesofsolidheterostructuresandceramicsbasedonsiliconcarbide AT bakazarov modelingofelectricalpropertiesofsolidheterostructuresandceramicsbasedonsiliconcarbide AT vacheboksarov modelingofelectricalpropertiesofsolidheterostructuresandceramicsbasedonsiliconcarbide |