An innovative semiconducting Ni(II)-metallogel based robust random access memory (RRAM) device for advanced flexible electronics applications

An innovative semiconducting Ni(II)-metallogel based robust random access memory (RRAM) device for advanced flexible electronics applications

Abstract A highly effective method for creating a supramolecular metallogel of Ni(II) ions (NiA-TA) has been developed in our work. This approach uses benzene-1,3,5-tricarboxylic acid as a low molecular weight gelator (LMWG) in DMF solvent. Rheological studies assessed the mechanical properties of t...

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Bibliographic Details
Main Authors: Arpita Roy, Subhendu Dhibar, Saurav Kumar, Sangita Some, Parul Garg, Pradip Ruidas, Subham Bhattacharjee, Ashok Bera, Bidyut Saha, Soumya Jyoti Ray
Format: Article
Language:English
Published: Nature Portfolio 2024-12-01
Series:Scientific Reports
Subjects:
Ni(II)-metallogel
LMWG
Microstructure
Schottky diode
Resistive switching
Online Access:https://doi.org/10.1038/s41598-024-79358-3
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