An innovative semiconducting Ni(II)-metallogel based robust random access memory (RRAM) device for advanced flexible electronics applications
Abstract A highly effective method for creating a supramolecular metallogel of Ni(II) ions (NiA-TA) has been developed in our work. This approach uses benzene-1,3,5-tricarboxylic acid as a low molecular weight gelator (LMWG) in DMF solvent. Rheological studies assessed the mechanical properties of t...
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Nature Portfolio
2024-12-01
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| Online Access: | https://doi.org/10.1038/s41598-024-79358-3 |
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| author | Arpita Roy Subhendu Dhibar Saurav Kumar Sangita Some Parul Garg Pradip Ruidas Subham Bhattacharjee Ashok Bera Bidyut Saha Soumya Jyoti Ray |
| author_facet | Arpita Roy Subhendu Dhibar Saurav Kumar Sangita Some Parul Garg Pradip Ruidas Subham Bhattacharjee Ashok Bera Bidyut Saha Soumya Jyoti Ray |
| author_sort | Arpita Roy |
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| description | Abstract A highly effective method for creating a supramolecular metallogel of Ni(II) ions (NiA-TA) has been developed in our work. This approach uses benzene-1,3,5-tricarboxylic acid as a low molecular weight gelator (LMWG) in DMF solvent. Rheological studies assessed the mechanical properties of the Ni(II)-metallogel, revealing its angular frequency response and thixotropic behaviour. Field emission scanning electron microscopy (FESEM) showed a complex rocky network structure, while transmission electron microscopy (TEM) identified rod-shaped formations. Energy dispersive X-ray (EDX) mapping confirmed the chemical composition, and Fourier transform infrared spectroscopy (FTIR) alongside X-ray photoelectron spectroscopy (XPS) provided insights into the metallogel’s formation mechanism. Schottky diode structures which were fabricated with this Ni(II)-metallogel exhibited notable charge transport properties. Moreover, resistive random access memory (RRAM) devices using NiA-TA demonstrated bipolar resistive switching with an ON/OFF ratio of ~ 110 and durability over 5000 cycles. In this work, logic gate circuits were designed using a 2 × 2 crossbar array. This work highlights the potential of Ni(II)-metallogels for non-volatile memory, neuromorphic computing, flexible electronics, and optoelectronics. Their easy fabrication, reliable switching, and stability make them promising candidates for advanced technologies, offering new opportunities for in-memory computing. |
| format | Article |
| id | doaj-art-39f81250f18242f6a0a27d1aad8085f1 |
| institution | Kabale University |
| issn | 2045-2322 |
| language | English |
| publishDate | 2024-12-01 |
| publisher | Nature Portfolio |
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| series | Scientific Reports |
| spelling | doaj-art-39f81250f18242f6a0a27d1aad8085f12025-01-05T12:24:07ZengNature PortfolioScientific Reports2045-23222024-12-0114111710.1038/s41598-024-79358-3An innovative semiconducting Ni(II)-metallogel based robust random access memory (RRAM) device for advanced flexible electronics applicationsArpita Roy0Subhendu Dhibar1Saurav Kumar2Sangita Some3Parul Garg4Pradip Ruidas5Subham Bhattacharjee6Ashok Bera7Bidyut Saha8Soumya Jyoti Ray9Department of Physics, Indian Institute of TechnologyColloid Chemistry Laboratory, Department of Chemistry, The University of Burdwan, GolapbagDepartment of Physics, Indian Institute of TechnologyColloid Chemistry Laboratory, Department of Chemistry, The University of Burdwan, GolapbagDepartment of Physics, Indian Institute of TechnologyDepartment of Chemistry, Kazi Nazrul UniversityDepartment of Chemistry, Kazi Nazrul UniversityDepartment of Physics, Indian Institute of TechnologyColloid Chemistry Laboratory, Department of Chemistry, The University of Burdwan, GolapbagDepartment of Physics, Indian Institute of TechnologyAbstract A highly effective method for creating a supramolecular metallogel of Ni(II) ions (NiA-TA) has been developed in our work. This approach uses benzene-1,3,5-tricarboxylic acid as a low molecular weight gelator (LMWG) in DMF solvent. Rheological studies assessed the mechanical properties of the Ni(II)-metallogel, revealing its angular frequency response and thixotropic behaviour. Field emission scanning electron microscopy (FESEM) showed a complex rocky network structure, while transmission electron microscopy (TEM) identified rod-shaped formations. Energy dispersive X-ray (EDX) mapping confirmed the chemical composition, and Fourier transform infrared spectroscopy (FTIR) alongside X-ray photoelectron spectroscopy (XPS) provided insights into the metallogel’s formation mechanism. Schottky diode structures which were fabricated with this Ni(II)-metallogel exhibited notable charge transport properties. Moreover, resistive random access memory (RRAM) devices using NiA-TA demonstrated bipolar resistive switching with an ON/OFF ratio of ~ 110 and durability over 5000 cycles. In this work, logic gate circuits were designed using a 2 × 2 crossbar array. This work highlights the potential of Ni(II)-metallogels for non-volatile memory, neuromorphic computing, flexible electronics, and optoelectronics. Their easy fabrication, reliable switching, and stability make them promising candidates for advanced technologies, offering new opportunities for in-memory computing.https://doi.org/10.1038/s41598-024-79358-3Ni(II)-metallogelLMWGMicrostructureSchottky diodeResistive switching |
| spellingShingle | Arpita Roy Subhendu Dhibar Saurav Kumar Sangita Some Parul Garg Pradip Ruidas Subham Bhattacharjee Ashok Bera Bidyut Saha Soumya Jyoti Ray An innovative semiconducting Ni(II)-metallogel based robust random access memory (RRAM) device for advanced flexible electronics applications Scientific Reports Ni(II)-metallogel LMWG Microstructure Schottky diode Resistive switching |
| title | An innovative semiconducting Ni(II)-metallogel based robust random access memory (RRAM) device for advanced flexible electronics applications |
| title_full | An innovative semiconducting Ni(II)-metallogel based robust random access memory (RRAM) device for advanced flexible electronics applications |
| title_fullStr | An innovative semiconducting Ni(II)-metallogel based robust random access memory (RRAM) device for advanced flexible electronics applications |
| title_full_unstemmed | An innovative semiconducting Ni(II)-metallogel based robust random access memory (RRAM) device for advanced flexible electronics applications |
| title_short | An innovative semiconducting Ni(II)-metallogel based robust random access memory (RRAM) device for advanced flexible electronics applications |
| title_sort | innovative semiconducting ni ii metallogel based robust random access memory rram device for advanced flexible electronics applications |
| topic | Ni(II)-metallogel LMWG Microstructure Schottky diode Resistive switching |
| url | https://doi.org/10.1038/s41598-024-79358-3 |
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