Liquid‐Solid Combination Memristors with Switchable Resistance
Abstract Here a reconfigurable memristor is demonstrated by connecting ZnO film to a fluidic channel. The memristive characteristics are successfully demonstrated with an electrolyte solution. The benefit of using a microfluidic channel is that the memristive characteristics can be adjusted by chang...
Saved in:
| Main Authors: | Libing Duan, Xue Han, Ruochen Pei, Qianwen Peng, Shenghui Guo, Yangyang Li, Wangchang Geng |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Wiley-VCH
2024-11-01
|
| Series: | Advanced Electronic Materials |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/aelm.202400167 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
-
Transparent Zinc Oxide Memristor Structures: Magnetron Sputtering of Thin Films, Resistive Switching Investigation, and Crossbar Array Fabrication
by: Alexander V. Saenko, et al.
Published: (2024-11-01) -
Memristor-based model of neuronal excitability and synaptic potentiation
by: Ivan M. Kipelkin, et al.
Published: (2024-11-01) -
Memristors Based on Ni(II)‐tetraaza[14]annulene Complexes: Toward an Unconventional Resistive Switching Mechanism
by: Andrzej Sławek, et al.
Published: (2024-12-01) -
Synergistic effect of Cu doped ZnO nanoparticles for enhanced electrochemical sensor and photocatalytic activity
by: H.N. Jayasimha, et al.
Published: (2024-10-01) -
Temperature Dependence on Microstructure, Crystallization Orientation, and Piezoelectric Properties of ZnO Films
by: Ke Deng, et al.
Published: (2025-01-01)