Eighty nine‐watt cascaded multistage power amplifier using gallium nitride‐on‐silicon high electron mobility transistor for L‐band radar applications
Abstract This work presents a gallium nitride (GaN) high electron mobility transistor (HEMT)–based cascaded multistage power amplifier (MPA) in class‐AB for L‐band radar applications. The purpose of this endeavour is to develop an MPA using GaN HEMT devices to achieve optimised parameters such as hi...
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| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2021-11-01
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| Series: | IET Circuits, Devices and Systems |
| Subjects: | |
| Online Access: | https://doi.org/10.1049/cds2.12075 |
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