Ozone Treatment Improved the Resistive Switching Uniformity of HfAlO2 Based RRAM Devices

Ozone Treatment Improved the Resistive Switching Uniformity of HfAlO2 Based RRAM Devices

HfAlO2 based resistive random access memory (RRAM) devices were fabricated using atomic layer deposition by modulating deposition cycles for HfO2 and Al2O3. Effect of ozone treatment on the resistive switching uniformity of HfAlO2 based RRAM devices was investigated. Compared to the as-fabricated de...

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Bibliographic Details
Main Authors:	Lifeng Liu, Yi Hou, Weibing Zhang, Dedong Han, Yi Wang
Format:	Article
Language:	English
Published:	Wiley 2015-01-01
Series:	Advances in Condensed Matter Physics
Online Access:	http://dx.doi.org/10.1155/2015/714097
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