Synthesis of 0.75Pb(Zr<sub>0.52</sub>Ti<sub>0.48</sub>)O<sub>3</sub>-0.25BiFeO<sub>3</sub> Thin Film Capacitors with Excellent Efficiency and Thermal Stability

Synthesis of 0.75Pb(Zr<sub>0.52</sub>Ti<sub>0.48</sub>)O<sub>3</sub>-0.25BiFeO<sub>3</sub> Thin Film Capacitors with Excellent Efficiency and Thermal Stability

The advancement of miniaturizing electronic information technology draws growing interest in dielectric capacitors due to their high-power density and rapid charge/discharge capabilities. The sol-gel method was utilized to fabricate the 0.75Pb(Zr<sub>0.52</sub>Ti<sub>0.48</sub&g...

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Bibliographic Details
Main Authors: Li Wu, Feifei Han, Kaiyuan Chen, Jianming Deng, Laijun Liu, Biaolin Peng
Format: Article
Language:English
Published: MDPI AG 2024-12-01
Series:Molecules
Subjects:
PZT
BFO
energy storage
thermal stability
Online Access:https://www.mdpi.com/1420-3049/30/1/8
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Summary:The advancement of miniaturizing electronic information technology draws growing interest in dielectric capacitors due to their high-power density and rapid charge/discharge capabilities. The sol-gel method was utilized to fabricate the 0.75Pb(Zr<sub>0.52</sub>Ti<sub>0.48</sub>)O<sub>3</sub>-0.25BiFeO<sub>3</sub> (PZT-25BFO) thin film. Excitingly, PZT-25BFO thin film exhibits an exceptional capacitive energy storage density (<i>W<sub>rec</sub></i> = 24.61–39.76 J/cm<sup>3</sup>) and a high efficiency (<i>η</i> = 53.78–72.74%). Furthermore, the dielectric energy storage density and efficiency enhance simultaneously with increasing thickness of the thin film. However, the loss factor shows the opposite trend. Specifically, the 12-layer PZT-25BFO thin film demonstrates the optimal properties, boasting a significant energy storage density (15.73 J/cm<sup>3</sup>), a high efficiency (77.65%), and remarkable thermal stability (±0.55% variation) from 303 K to 383 K at 1000 kV/cm. This excellent thermal stability can be attributed to the residual stress resulting from a phase transition from the rhombohedral to tetragonal phase. The result offers valuable guidance for the development of ferroelectric thin films in high-power capacitive energy storage applications.
ISSN:1420-3049

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