Trap‐induced persistent luminescence in organic light‐emitting diodes
Abstract Luminescence in organics that lasts for seconds to a few hours after light excitation has been reported recently, showcasing significant application potentials in flexible electronics and bioimaging. In contrast, long‐lasting luminescence that can be electrically excited, whether in organic...
Saved in:
| Main Authors: | , , , , , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Wiley
2025-05-01
|
| Series: | InfoMat |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/inf2.12657 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1849714975935823872 |
|---|---|
| author | Zishuang Wu Cunjian Lin Rujun Yang Chenhan Zhan Yajing Wang Kai‐Ning Tong Shihai You Ying Lv Guodan Wei Jumpei Ueda Yixi Zhuang Rong‐Jun Xie |
| author_facet | Zishuang Wu Cunjian Lin Rujun Yang Chenhan Zhan Yajing Wang Kai‐Ning Tong Shihai You Ying Lv Guodan Wei Jumpei Ueda Yixi Zhuang Rong‐Jun Xie |
| author_sort | Zishuang Wu |
| collection | DOAJ |
| description | Abstract Luminescence in organics that lasts for seconds to a few hours after light excitation has been reported recently, showcasing significant application potentials in flexible electronics and bioimaging. In contrast, long‐lasting luminescence that can be electrically excited, whether in organics or inorganics, is much rarer and often less efficient. In this study, we report persistent luminescence (PersL) in organic light‐emitting diodes (OLEDs) that lasts over 100 s and an energy storage effect beyond 60 min after charging with a direct‐current electric field. Thermoluminescence studies reveal that the PersL in OLEDs is induced by traps formed in a host‐guest molecular system serving as an emission layer (EML) with a trap depth of approximately 0.24 eV, consistent with the results from the same EML materials under light irradiation. Integrating results from electronic spin resonance, and density functional theory calculations, we propose a model delineating the charge carrier migration responsible for the trap‐induced PersL in OLEDs. This study on trap‐induced PersL in OLEDs may deepen our understanding of the luminescence mechanism in organic semiconductors and pave the way for expanding their applications in optoelectronics, energy storage and biological detection technologies. |
| format | Article |
| id | doaj-art-31da8df8d2da46999888b51a6df3522f |
| institution | DOAJ |
| issn | 2567-3165 |
| language | English |
| publishDate | 2025-05-01 |
| publisher | Wiley |
| record_format | Article |
| series | InfoMat |
| spelling | doaj-art-31da8df8d2da46999888b51a6df3522f2025-08-20T03:13:32ZengWileyInfoMat2567-31652025-05-0175n/an/a10.1002/inf2.12657Trap‐induced persistent luminescence in organic light‐emitting diodesZishuang Wu0Cunjian Lin1Rujun Yang2Chenhan Zhan3Yajing Wang4Kai‐Ning Tong5Shihai You6Ying Lv7Guodan Wei8Jumpei Ueda9Yixi Zhuang10Rong‐Jun Xie11College of Materials and Fujian Key Laboratory of Surface and Interface Engineering for High Performance Materials Xiamen University Xiamen the People's Republic of ChinaGraduate School of Advanced Science and Technology Japan Advanced Institute of Science and Technology Nomi JapanCollege of Materials and Fujian Key Laboratory of Surface and Interface Engineering for High Performance Materials Xiamen University Xiamen the People's Republic of ChinaCollege of Materials and Fujian Key Laboratory of Surface and Interface Engineering for High Performance Materials Xiamen University Xiamen the People's Republic of ChinaCollege of Materials and Fujian Key Laboratory of Surface and Interface Engineering for High Performance Materials Xiamen University Xiamen the People's Republic of ChinaInstitute of Materials Science, Tsinghua Shenzhen International Graduate School, Tsinghua University Shenzhen the People's Republic of ChinaResearch Institute of Frontier Science, Southwest Jiaotong University Chengdu Sichuan the People's Republic of ChinaNanchang Key Laboratory of Photoelectric Conversion and Energy Storage Materials, College of Science Nanchang Institute of Technology Nanchang the People's Republic of ChinaInstitute of Materials Science, Tsinghua Shenzhen International Graduate School, Tsinghua University Shenzhen the People's Republic of ChinaGraduate School of Advanced Science and Technology Japan Advanced Institute of Science and Technology Nomi JapanCollege of Materials and Fujian Key Laboratory of Surface and Interface Engineering for High Performance Materials Xiamen University Xiamen the People's Republic of ChinaCollege of Materials and Fujian Key Laboratory of Surface and Interface Engineering for High Performance Materials Xiamen University Xiamen the People's Republic of ChinaAbstract Luminescence in organics that lasts for seconds to a few hours after light excitation has been reported recently, showcasing significant application potentials in flexible electronics and bioimaging. In contrast, long‐lasting luminescence that can be electrically excited, whether in organics or inorganics, is much rarer and often less efficient. In this study, we report persistent luminescence (PersL) in organic light‐emitting diodes (OLEDs) that lasts over 100 s and an energy storage effect beyond 60 min after charging with a direct‐current electric field. Thermoluminescence studies reveal that the PersL in OLEDs is induced by traps formed in a host‐guest molecular system serving as an emission layer (EML) with a trap depth of approximately 0.24 eV, consistent with the results from the same EML materials under light irradiation. Integrating results from electronic spin resonance, and density functional theory calculations, we propose a model delineating the charge carrier migration responsible for the trap‐induced PersL in OLEDs. This study on trap‐induced PersL in OLEDs may deepen our understanding of the luminescence mechanism in organic semiconductors and pave the way for expanding their applications in optoelectronics, energy storage and biological detection technologies.https://doi.org/10.1002/inf2.12657DFT calculationsorganic light‐emitting diodesorganic persistent luminescencetime–temperature indicatorstraps in organics |
| spellingShingle | Zishuang Wu Cunjian Lin Rujun Yang Chenhan Zhan Yajing Wang Kai‐Ning Tong Shihai You Ying Lv Guodan Wei Jumpei Ueda Yixi Zhuang Rong‐Jun Xie Trap‐induced persistent luminescence in organic light‐emitting diodes InfoMat DFT calculations organic light‐emitting diodes organic persistent luminescence time–temperature indicators traps in organics |
| title | Trap‐induced persistent luminescence in organic light‐emitting diodes |
| title_full | Trap‐induced persistent luminescence in organic light‐emitting diodes |
| title_fullStr | Trap‐induced persistent luminescence in organic light‐emitting diodes |
| title_full_unstemmed | Trap‐induced persistent luminescence in organic light‐emitting diodes |
| title_short | Trap‐induced persistent luminescence in organic light‐emitting diodes |
| title_sort | trap induced persistent luminescence in organic light emitting diodes |
| topic | DFT calculations organic light‐emitting diodes organic persistent luminescence time–temperature indicators traps in organics |
| url | https://doi.org/10.1002/inf2.12657 |
| work_keys_str_mv | AT zishuangwu trapinducedpersistentluminescenceinorganiclightemittingdiodes AT cunjianlin trapinducedpersistentluminescenceinorganiclightemittingdiodes AT rujunyang trapinducedpersistentluminescenceinorganiclightemittingdiodes AT chenhanzhan trapinducedpersistentluminescenceinorganiclightemittingdiodes AT yajingwang trapinducedpersistentluminescenceinorganiclightemittingdiodes AT kainingtong trapinducedpersistentluminescenceinorganiclightemittingdiodes AT shihaiyou trapinducedpersistentluminescenceinorganiclightemittingdiodes AT yinglv trapinducedpersistentluminescenceinorganiclightemittingdiodes AT guodanwei trapinducedpersistentluminescenceinorganiclightemittingdiodes AT jumpeiueda trapinducedpersistentluminescenceinorganiclightemittingdiodes AT yixizhuang trapinducedpersistentluminescenceinorganiclightemittingdiodes AT rongjunxie trapinducedpersistentluminescenceinorganiclightemittingdiodes |