A Detailed Analytical Study of Non-Linear Semiconductor Device Modelling
This paper presents a detailed analytical study of Gunn, SCR, and p-n junction and of the physical processes that occur inside. Based on the properties of these devices, models for Gunn, SCR, and p-n junction diode have been developed. The results of computer simulated examples have been presented i...
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| Format: | Article |
| Language: | English |
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Wiley
1995-01-01
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| Series: | Active and Passive Electronic Components |
| Online Access: | http://dx.doi.org/10.1155/1995/59312 |
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| _version_ | 1841524712723709952 |
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| author | Umesh Kumar |
| author_facet | Umesh Kumar |
| author_sort | Umesh Kumar |
| collection | DOAJ |
| description | This paper presents a detailed analytical study of Gunn, SCR, and p-n junction and of the physical processes that occur inside. Based on the properties of these devices, models for Gunn, SCR, and p-n
junction diode have been developed. The results of computer simulated examples have been presented in each case. The non-linear lumped model for Gunn is a unified model as it describes the diffusion effects as the-domain traves from cathode to anode. An additional feature of this model is that it describes the domain extinction and nucleation phenomena in Gunn dioder with the help of a simple timing circuit. The non-linear lumped model for SCR is general and is valid under any mode of operation in any circuit environment. The memristive circuit model for p-n junction diodes is capable of simulating realistically the diode’s dynamic behavior under reverse, forward and sinusiodal operating modes. The model uses memristor, the charge-controlled resistor to mimic various second-order effects due to conductivity modulation. It is found that both storage time and fall time of the diode can be accurately predicted. |
| format | Article |
| id | doaj-art-2fc64a2bfb1e46ffa3445ee88372d603 |
| institution | Kabale University |
| issn | 0882-7516 1563-5031 |
| language | English |
| publishDate | 1995-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Active and Passive Electronic Components |
| spelling | doaj-art-2fc64a2bfb1e46ffa3445ee88372d6032025-02-03T05:47:33ZengWileyActive and Passive Electronic Components0882-75161563-50311995-01-0118421124510.1155/1995/59312A Detailed Analytical Study of Non-Linear Semiconductor Device ModellingUmesh Kumar0Department of Electrical Engineering, I.I. T., Havz KHAS, New Delhi 110016, IndiaThis paper presents a detailed analytical study of Gunn, SCR, and p-n junction and of the physical processes that occur inside. Based on the properties of these devices, models for Gunn, SCR, and p-n junction diode have been developed. The results of computer simulated examples have been presented in each case. The non-linear lumped model for Gunn is a unified model as it describes the diffusion effects as the-domain traves from cathode to anode. An additional feature of this model is that it describes the domain extinction and nucleation phenomena in Gunn dioder with the help of a simple timing circuit. The non-linear lumped model for SCR is general and is valid under any mode of operation in any circuit environment. The memristive circuit model for p-n junction diodes is capable of simulating realistically the diode’s dynamic behavior under reverse, forward and sinusiodal operating modes. The model uses memristor, the charge-controlled resistor to mimic various second-order effects due to conductivity modulation. It is found that both storage time and fall time of the diode can be accurately predicted.http://dx.doi.org/10.1155/1995/59312 |
| spellingShingle | Umesh Kumar A Detailed Analytical Study of Non-Linear Semiconductor Device Modelling Active and Passive Electronic Components |
| title | A Detailed Analytical Study of Non-Linear Semiconductor Device Modelling |
| title_full | A Detailed Analytical Study of Non-Linear Semiconductor Device Modelling |
| title_fullStr | A Detailed Analytical Study of Non-Linear Semiconductor Device Modelling |
| title_full_unstemmed | A Detailed Analytical Study of Non-Linear Semiconductor Device Modelling |
| title_short | A Detailed Analytical Study of Non-Linear Semiconductor Device Modelling |
| title_sort | detailed analytical study of non linear semiconductor device modelling |
| url | http://dx.doi.org/10.1155/1995/59312 |
| work_keys_str_mv | AT umeshkumar adetailedanalyticalstudyofnonlinearsemiconductordevicemodelling AT umeshkumar detailedanalyticalstudyofnonlinearsemiconductordevicemodelling |