Electrothermal Failure Physics of GaN Schottky Diodes Under High-Temperature Forward Biasing

Electrothermal Failure Physics of GaN Schottky Diodes Under High-Temperature Forward Biasing

The reliability of GaN-based devices operating under high temperatures is crucial for their application in extreme environments. To identify the fundamental mechanisms behind high-temperature degradation, we investigated GaN-on-sapphire Schottky barrier diodes (SBDs) under simultaneous heating and e...

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Bibliographic Details
Main Authors: Nahid Sultan Al-Mamun, Yuxin Du, Jianan Song, Rongming Chu, Aman Haque
Format: Article
Language:English
Published: MDPI AG 2025-02-01
Series:Micromachines
Subjects:
GaN Schottky diode
in situ TEM
high-temperature operation of GaN
electrothermal degradation of GaN
reliability of GaN
Online Access:https://www.mdpi.com/2072-666X/16/3/242
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