Comparison of the MOSFET Response at Exposed of the X-Ray and Gamma Radiation
Introduction. Electromagnetic or ionizing radiation (IO) has great influence for radiation resistance of MOSFETs (metal–oxide–semiconductor field-effect transistors) and integrated circuits. Oxide, for the studied samples, is silicon dioxide, which acts as a dielectric in MOS structure. Currently, i...
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| Main Authors: | , |
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| Format: | Article |
| Language: | Russian |
| Published: |
Saint Petersburg Electrotechnical University "LETI"
2020-02-01
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| Series: | Известия высших учебных заведений России: Радиоэлектроника |
| Subjects: | |
| Online Access: | https://re.eltech.ru/jour/article/view/400 |
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