A novel self-biased pMOS clamped deep trench CSTBT with enhanced tradeoff and short-circuit capability
Abstract In this work, a novel deep trench CSTBT (DT-CSTBT) features emitter trench and the P-layer is proposed and investigated by simulation. The self-biased pMOS, comprising an emitter trench, N-CS layer, P-layer, and P-well, demonstrates an excellent clamping effect potential. The proposed DT-CS...
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| Language: | English |
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Nature Portfolio
2025-01-01
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| Series: | Scientific Reports |
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| Online Access: | https://doi.org/10.1038/s41598-025-85530-0 |
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| author | Jianbin Guo Zhehong Qian Xinru Chen Hang Xu Yafen Yang David Wei Zhang |
| author_facet | Jianbin Guo Zhehong Qian Xinru Chen Hang Xu Yafen Yang David Wei Zhang |
| author_sort | Jianbin Guo |
| collection | DOAJ |
| description | Abstract In this work, a novel deep trench CSTBT (DT-CSTBT) features emitter trench and the P-layer is proposed and investigated by simulation. The self-biased pMOS, comprising an emitter trench, N-CS layer, P-layer, and P-well, demonstrates an excellent clamping effect potential. The proposed DT-CSTBT suppresses the saturation current and improves the heat dissipation, resulting in a 23.5% expansion of the short-circuit safe operating area (SCSOA). It ensures the better reliability of the gate due to the high electric field away from the gate. Furthermore, the tradeoff relationship between on-state voltage (V ON) and turn-off loss (E off) of the new structure is also improved by 23.2% compared with the conventional CSTBT. |
| format | Article |
| id | doaj-art-2ae716c69c9c4e02b3031b51de8f004a |
| institution | Kabale University |
| issn | 2045-2322 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | Scientific Reports |
| spelling | doaj-art-2ae716c69c9c4e02b3031b51de8f004a2025-01-12T12:23:24ZengNature PortfolioScientific Reports2045-23222025-01-0115111910.1038/s41598-025-85530-0A novel self-biased pMOS clamped deep trench CSTBT with enhanced tradeoff and short-circuit capabilityJianbin Guo0Zhehong Qian1Xinru Chen2Hang Xu3Yafen Yang4David Wei Zhang5School of Microelectronics, Fudan UniversitySchool of Microelectronics, Fudan UniversitySchool of Microelectronics, Fudan UniversitySchool of Microelectronics, Fudan UniversitySchool of Microelectronics, Fudan UniversitySchool of Microelectronics, Fudan UniversityAbstract In this work, a novel deep trench CSTBT (DT-CSTBT) features emitter trench and the P-layer is proposed and investigated by simulation. The self-biased pMOS, comprising an emitter trench, N-CS layer, P-layer, and P-well, demonstrates an excellent clamping effect potential. The proposed DT-CSTBT suppresses the saturation current and improves the heat dissipation, resulting in a 23.5% expansion of the short-circuit safe operating area (SCSOA). It ensures the better reliability of the gate due to the high electric field away from the gate. Furthermore, the tradeoff relationship between on-state voltage (V ON) and turn-off loss (E off) of the new structure is also improved by 23.2% compared with the conventional CSTBT.https://doi.org/10.1038/s41598-025-85530-0CSTBTSelf-biased pMOSSaturation currentTurn-off lossShort-circuit safe operating area |
| spellingShingle | Jianbin Guo Zhehong Qian Xinru Chen Hang Xu Yafen Yang David Wei Zhang A novel self-biased pMOS clamped deep trench CSTBT with enhanced tradeoff and short-circuit capability Scientific Reports CSTBT Self-biased pMOS Saturation current Turn-off loss Short-circuit safe operating area |
| title | A novel self-biased pMOS clamped deep trench CSTBT with enhanced tradeoff and short-circuit capability |
| title_full | A novel self-biased pMOS clamped deep trench CSTBT with enhanced tradeoff and short-circuit capability |
| title_fullStr | A novel self-biased pMOS clamped deep trench CSTBT with enhanced tradeoff and short-circuit capability |
| title_full_unstemmed | A novel self-biased pMOS clamped deep trench CSTBT with enhanced tradeoff and short-circuit capability |
| title_short | A novel self-biased pMOS clamped deep trench CSTBT with enhanced tradeoff and short-circuit capability |
| title_sort | novel self biased pmos clamped deep trench cstbt with enhanced tradeoff and short circuit capability |
| topic | CSTBT Self-biased pMOS Saturation current Turn-off loss Short-circuit safe operating area |
| url | https://doi.org/10.1038/s41598-025-85530-0 |
| work_keys_str_mv | AT jianbinguo anovelselfbiasedpmosclampeddeeptrenchcstbtwithenhancedtradeoffandshortcircuitcapability AT zhehongqian anovelselfbiasedpmosclampeddeeptrenchcstbtwithenhancedtradeoffandshortcircuitcapability AT xinruchen anovelselfbiasedpmosclampeddeeptrenchcstbtwithenhancedtradeoffandshortcircuitcapability AT hangxu anovelselfbiasedpmosclampeddeeptrenchcstbtwithenhancedtradeoffandshortcircuitcapability AT yafenyang anovelselfbiasedpmosclampeddeeptrenchcstbtwithenhancedtradeoffandshortcircuitcapability AT davidweizhang anovelselfbiasedpmosclampeddeeptrenchcstbtwithenhancedtradeoffandshortcircuitcapability AT jianbinguo novelselfbiasedpmosclampeddeeptrenchcstbtwithenhancedtradeoffandshortcircuitcapability AT zhehongqian novelselfbiasedpmosclampeddeeptrenchcstbtwithenhancedtradeoffandshortcircuitcapability AT xinruchen novelselfbiasedpmosclampeddeeptrenchcstbtwithenhancedtradeoffandshortcircuitcapability AT hangxu novelselfbiasedpmosclampeddeeptrenchcstbtwithenhancedtradeoffandshortcircuitcapability AT yafenyang novelselfbiasedpmosclampeddeeptrenchcstbtwithenhancedtradeoffandshortcircuitcapability AT davidweizhang novelselfbiasedpmosclampeddeeptrenchcstbtwithenhancedtradeoffandshortcircuitcapability |