THE USE OF THE FINITE DIFFERENCE METHOD FOR CALCULATION OF ELECTRONIC STATES IN MIS-STRUCTURE WITH SINGLE DONOR 1

THE USE OF THE FINITE DIFFERENCE METHOD FOR CALCULATION OF ELECTRONIC STATES IN MIS-STRUCTURE WITH SINGLE DONOR 1

Numerical modeling of electronic state evolution due to non-uniform external electric field in the structure metal-insulator-semiconductor with solitary donor center is carried out. Considering a nanometer disc-shaped gate as a source of the electric field, the problem for the Laplace equation in mu...

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Bibliographic Details
Main Authors: E. A. Levchuk, S. V. Lemeshevskii, L. F. Makarenko
Format: Article
Language:Russian
Published: National Academy of Sciences of Belarus, the United Institute of Informatics Problems 2018-03-01
Series:Informatika
Subjects:
finite difference method
mis-structure
schrödinger equation
nanogate
energy level
numerical modeling
Online Access:https://inf.grid.by/jour/article/view/312
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