Ultra‐Low Threshold Resonance Switching by Terahertz Field Enhancement‐Induced Nanobridge
Abstract Ongoing efforts spanning decades aim to enhance the efficiency of optical devices, highlighting the need for a pioneering approach in the development of next‐generation components over a broad range of electromagnetic wave spectra. The nonlinear transport of photoexcited carriers in semicon...
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| Format: | Article |
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Wiley
2025-01-01
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| Series: | Advanced Science |
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| Online Access: | https://doi.org/10.1002/advs.202405225 |
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| author | Sang‐Hun Lee Moohyuk Kim Yeeun Roh Myung‐Ki Kim Minah Seo |
| author_facet | Sang‐Hun Lee Moohyuk Kim Yeeun Roh Myung‐Ki Kim Minah Seo |
| author_sort | Sang‐Hun Lee |
| collection | DOAJ |
| description | Abstract Ongoing efforts spanning decades aim to enhance the efficiency of optical devices, highlighting the need for a pioneering approach in the development of next‐generation components over a broad range of electromagnetic wave spectra. The nonlinear transport of photoexcited carriers in semiconductors at low photon energies is crucial to advancements in semiconductor technology, communication, sensing, and various other fields. In this study, ultra‐low threshold resonance mode switching by strong nonlinear carrier transport beyond the semi‐classical Boltzmann transport regime using terahertz (THz) electromagnetic waves are demonstrated, whose energy is thousands of times smaller than the bandgap. This is achieved by employing elaborately fabricated 3D tip structures at the nanoscale, and nonlinear effects are directly observed with the THz resonance mode switching. The nanotip structure intensively localizes the THz field and amplifies it by more than ten thousand times, leading to the first observation of carrier multiplication phenomena in these low‐intensity THz fields. This experimental findings, confirmed by concrete calculations, shed light on the newly discovered nonlinear behavior of THz fields and their strong interactions with nanoscale structures, with potential implications and insights for advanced THz technologies beyond the quantum regime. |
| format | Article |
| id | doaj-art-23783d1b05c64ec184c470642e680394 |
| institution | Kabale University |
| issn | 2198-3844 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Advanced Science |
| spelling | doaj-art-23783d1b05c64ec184c470642e6803942025-01-09T11:44:45ZengWileyAdvanced Science2198-38442025-01-01121n/an/a10.1002/advs.202405225Ultra‐Low Threshold Resonance Switching by Terahertz Field Enhancement‐Induced NanobridgeSang‐Hun Lee0Moohyuk Kim1Yeeun Roh2Myung‐Ki Kim3Minah Seo4Department of Optical Engineering Kumoh National Institute of Technology 350‐27, Gumidae‐ro Gumi Gyeongbuk 39253 Republic of KoreaKU‐KIST Graduate School of Converging Science and Technology Korea University Anam‐ro 145, Seongbuk‐gu Seoul 02841 Republic of KoreaSensor System Research Center Korea Institute of Science and Technology Seoul 02792 Republic of KoreaKU‐KIST Graduate School of Converging Science and Technology Korea University Anam‐ro 145, Seongbuk‐gu Seoul 02841 Republic of KoreaKU‐KIST Graduate School of Converging Science and Technology Korea University Anam‐ro 145, Seongbuk‐gu Seoul 02841 Republic of KoreaAbstract Ongoing efforts spanning decades aim to enhance the efficiency of optical devices, highlighting the need for a pioneering approach in the development of next‐generation components over a broad range of electromagnetic wave spectra. The nonlinear transport of photoexcited carriers in semiconductors at low photon energies is crucial to advancements in semiconductor technology, communication, sensing, and various other fields. In this study, ultra‐low threshold resonance mode switching by strong nonlinear carrier transport beyond the semi‐classical Boltzmann transport regime using terahertz (THz) electromagnetic waves are demonstrated, whose energy is thousands of times smaller than the bandgap. This is achieved by employing elaborately fabricated 3D tip structures at the nanoscale, and nonlinear effects are directly observed with the THz resonance mode switching. The nanotip structure intensively localizes the THz field and amplifies it by more than ten thousand times, leading to the first observation of carrier multiplication phenomena in these low‐intensity THz fields. This experimental findings, confirmed by concrete calculations, shed light on the newly discovered nonlinear behavior of THz fields and their strong interactions with nanoscale structures, with potential implications and insights for advanced THz technologies beyond the quantum regime.https://doi.org/10.1002/advs.202405225nanotipnonlinear effectquantum photonicsterahertz spectroscopy |
| spellingShingle | Sang‐Hun Lee Moohyuk Kim Yeeun Roh Myung‐Ki Kim Minah Seo Ultra‐Low Threshold Resonance Switching by Terahertz Field Enhancement‐Induced Nanobridge Advanced Science nanotip nonlinear effect quantum photonics terahertz spectroscopy |
| title | Ultra‐Low Threshold Resonance Switching by Terahertz Field Enhancement‐Induced Nanobridge |
| title_full | Ultra‐Low Threshold Resonance Switching by Terahertz Field Enhancement‐Induced Nanobridge |
| title_fullStr | Ultra‐Low Threshold Resonance Switching by Terahertz Field Enhancement‐Induced Nanobridge |
| title_full_unstemmed | Ultra‐Low Threshold Resonance Switching by Terahertz Field Enhancement‐Induced Nanobridge |
| title_short | Ultra‐Low Threshold Resonance Switching by Terahertz Field Enhancement‐Induced Nanobridge |
| title_sort | ultra low threshold resonance switching by terahertz field enhancement induced nanobridge |
| topic | nanotip nonlinear effect quantum photonics terahertz spectroscopy |
| url | https://doi.org/10.1002/advs.202405225 |
| work_keys_str_mv | AT sanghunlee ultralowthresholdresonanceswitchingbyterahertzfieldenhancementinducednanobridge AT moohyukkim ultralowthresholdresonanceswitchingbyterahertzfieldenhancementinducednanobridge AT yeeunroh ultralowthresholdresonanceswitchingbyterahertzfieldenhancementinducednanobridge AT myungkikim ultralowthresholdresonanceswitchingbyterahertzfieldenhancementinducednanobridge AT minahseo ultralowthresholdresonanceswitchingbyterahertzfieldenhancementinducednanobridge |