Investigation of solution-processed tungsten disulfide as switching layer in flexible resistive memory devices for performance and stability
Solution-processed tungsten disulfide (WS _2 ) is demonstrated as a promising resistive switching layer for flexible resistive random access memory (RRAM) devices. For this study, WS _2 nanoparticle solution was prepared by liquid exfoliation process from WS _2 powder and comprehensive material inve...
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| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
IOP Publishing
2024-01-01
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| Series: | Nano Express |
| Subjects: | |
| Online Access: | https://doi.org/10.1088/2632-959X/ad9854 |
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