Key Techniques of SiC MOSFET Chip Design and its Development Trend
It introduced the application advantages of SiC MOSFET and determined an optimized design of drift layer structure based on the theory of ideal blocking characteristics and on-state resistance. Afterwards, the design of key structures in cell was optimized in consideration of threshold voltage, oxid...
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| Format: | Article |
| Language: | zho |
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Editorial Office of Control and Information Technology
2017-01-01
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| Series: | Kongzhi Yu Xinxi Jishu |
| Subjects: | |
| Online Access: | http://ctet.csrzic.com/thesisDetails#10.13889/j.issn.2095-3631.2017.01.007 |
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| _version_ | 1849224857306267648 |
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| author | GAO Yunbin LI Chengzhan JIANG Huaping |
| author_facet | GAO Yunbin LI Chengzhan JIANG Huaping |
| author_sort | GAO Yunbin |
| collection | DOAJ |
| description | It introduced the application advantages of SiC MOSFET and determined an optimized design of drift layer structure based on the theory of ideal blocking characteristics and on-state resistance. Afterwards, the design of key structures in cell was optimized in consideration of threshold voltage, oxide electric field crowding and on-state resistance. Finally, the development trend of SiC MOSFET chip was expounded from the aspects of on-resistance optimization, higher voltage grade chip development and monolithic integrated freewheeling diode. |
| format | Article |
| id | doaj-art-224e69e17cea4c7f94742b5bbf9ad71a |
| institution | Kabale University |
| issn | 2096-5427 |
| language | zho |
| publishDate | 2017-01-01 |
| publisher | Editorial Office of Control and Information Technology |
| record_format | Article |
| series | Kongzhi Yu Xinxi Jishu |
| spelling | doaj-art-224e69e17cea4c7f94742b5bbf9ad71a2025-08-25T06:50:35ZzhoEditorial Office of Control and Information TechnologyKongzhi Yu Xinxi Jishu2096-54272017-01-0134333882321699Key Techniques of SiC MOSFET Chip Design and its Development TrendGAO YunbinLI ChengzhanJIANG HuapingIt introduced the application advantages of SiC MOSFET and determined an optimized design of drift layer structure based on the theory of ideal blocking characteristics and on-state resistance. Afterwards, the design of key structures in cell was optimized in consideration of threshold voltage, oxide electric field crowding and on-state resistance. Finally, the development trend of SiC MOSFET chip was expounded from the aspects of on-resistance optimization, higher voltage grade chip development and monolithic integrated freewheeling diode.http://ctet.csrzic.com/thesisDetails#10.13889/j.issn.2095-3631.2017.01.007SiC MOSFETblocking characteristicson-state resistancethreshold voltagestructure parameter |
| spellingShingle | GAO Yunbin LI Chengzhan JIANG Huaping Key Techniques of SiC MOSFET Chip Design and its Development Trend Kongzhi Yu Xinxi Jishu SiC MOSFET blocking characteristics on-state resistance threshold voltage structure parameter |
| title | Key Techniques of SiC MOSFET Chip Design and its Development Trend |
| title_full | Key Techniques of SiC MOSFET Chip Design and its Development Trend |
| title_fullStr | Key Techniques of SiC MOSFET Chip Design and its Development Trend |
| title_full_unstemmed | Key Techniques of SiC MOSFET Chip Design and its Development Trend |
| title_short | Key Techniques of SiC MOSFET Chip Design and its Development Trend |
| title_sort | key techniques of sic mosfet chip design and its development trend |
| topic | SiC MOSFET blocking characteristics on-state resistance threshold voltage structure parameter |
| url | http://ctet.csrzic.com/thesisDetails#10.13889/j.issn.2095-3631.2017.01.007 |
| work_keys_str_mv | AT gaoyunbin keytechniquesofsicmosfetchipdesignanditsdevelopmenttrend AT lichengzhan keytechniquesofsicmosfetchipdesignanditsdevelopmenttrend AT jianghuaping keytechniquesofsicmosfetchipdesignanditsdevelopmenttrend |