Unusual plastic strain-induced phase transformation phenomena in silicon
Abstract Pressure-induced phase transformations (PTs) in Si, the most important electronic material, have been broadly studied, whereas strain-induced PTs have never been studied in situ. Here, we reveal in situ various important plastic strain-induced PT phenomena. A correlation between the direct...
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Nature Portfolio
2024-08-01
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| Series: | Nature Communications |
| Online Access: | https://doi.org/10.1038/s41467-024-51469-5 |
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| author | Sorb Yesudhas Valery I. Levitas Feng Lin K. K. Pandey Jesse S. Smith |
| author_facet | Sorb Yesudhas Valery I. Levitas Feng Lin K. K. Pandey Jesse S. Smith |
| author_sort | Sorb Yesudhas |
| collection | DOAJ |
| description | Abstract Pressure-induced phase transformations (PTs) in Si, the most important electronic material, have been broadly studied, whereas strain-induced PTs have never been studied in situ. Here, we reveal in situ various important plastic strain-induced PT phenomena. A correlation between the direct and inverse Hall-Petch effect of particle size on yield strength and pressure for strain-induced PT is predicted theoretically and confirmed experimentally for Si-I→Si-II PT. For 100 nm particles, the strain-induced PT Si-I→Si-II initiates at 0.3 GPa under both compression and shear while it starts at 16.2 GPa under hydrostatic conditions. The Si-I→Si-III PT starts at 0.6 GPa but does not occur under hydrostatic pressure. Pressure in small Si-II and Si-III regions of micron and 100 nm particles is ∼5–7 GPa higher than in Si-I. For 100 nm Si, a sequence of Si-I → I + II → I + II + III PT is observed, and the coexistence of four phases, Si-I, II, III, and XI, is found under torsion. Retaining Si-II and single-phase Si-III at ambient pressure and obtaining reverse Si-II→Si-I PT demonstrates the possibilities of manipulating different synthetic paths. The obtained results corroborate the elaborated dislocation pileup-based mechanism and have numerous applications for developing economic defect-induced synthesis of nanostructured materials, surface treatment (polishing, turning, etc.), and friction. |
| format | Article |
| id | doaj-art-214d1db02477473c9ba7107f4c15fea7 |
| institution | Kabale University |
| issn | 2041-1723 |
| language | English |
| publishDate | 2024-08-01 |
| publisher | Nature Portfolio |
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| spelling | doaj-art-214d1db02477473c9ba7107f4c15fea72024-12-22T12:36:03ZengNature PortfolioNature Communications2041-17232024-08-0115111310.1038/s41467-024-51469-5Unusual plastic strain-induced phase transformation phenomena in siliconSorb Yesudhas0Valery I. Levitas1Feng Lin2K. K. Pandey3Jesse S. Smith4Department of Aerospace Engineering, Iowa State UniversityDepartment of Aerospace Engineering, Iowa State UniversityDepartment of Aerospace Engineering, Iowa State UniversityHigh Pressure & Synchrotron Radiation Physics Division, Bhabha Atomic Research CentreHPCAT, X-ray Science Division, Argonne National Laboratory, ArgonneAbstract Pressure-induced phase transformations (PTs) in Si, the most important electronic material, have been broadly studied, whereas strain-induced PTs have never been studied in situ. Here, we reveal in situ various important plastic strain-induced PT phenomena. A correlation between the direct and inverse Hall-Petch effect of particle size on yield strength and pressure for strain-induced PT is predicted theoretically and confirmed experimentally for Si-I→Si-II PT. For 100 nm particles, the strain-induced PT Si-I→Si-II initiates at 0.3 GPa under both compression and shear while it starts at 16.2 GPa under hydrostatic conditions. The Si-I→Si-III PT starts at 0.6 GPa but does not occur under hydrostatic pressure. Pressure in small Si-II and Si-III regions of micron and 100 nm particles is ∼5–7 GPa higher than in Si-I. For 100 nm Si, a sequence of Si-I → I + II → I + II + III PT is observed, and the coexistence of four phases, Si-I, II, III, and XI, is found under torsion. Retaining Si-II and single-phase Si-III at ambient pressure and obtaining reverse Si-II→Si-I PT demonstrates the possibilities of manipulating different synthetic paths. The obtained results corroborate the elaborated dislocation pileup-based mechanism and have numerous applications for developing economic defect-induced synthesis of nanostructured materials, surface treatment (polishing, turning, etc.), and friction.https://doi.org/10.1038/s41467-024-51469-5 |
| spellingShingle | Sorb Yesudhas Valery I. Levitas Feng Lin K. K. Pandey Jesse S. Smith Unusual plastic strain-induced phase transformation phenomena in silicon Nature Communications |
| title | Unusual plastic strain-induced phase transformation phenomena in silicon |
| title_full | Unusual plastic strain-induced phase transformation phenomena in silicon |
| title_fullStr | Unusual plastic strain-induced phase transformation phenomena in silicon |
| title_full_unstemmed | Unusual plastic strain-induced phase transformation phenomena in silicon |
| title_short | Unusual plastic strain-induced phase transformation phenomena in silicon |
| title_sort | unusual plastic strain induced phase transformation phenomena in silicon |
| url | https://doi.org/10.1038/s41467-024-51469-5 |
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