Fabrication of air bridges on (100) β-Ga2O3 using crystallographic HCl gas etching
β-Ga2O3 air bridges on (100) substrates were fabricated through a self-aligning process that used conventional anisotropic BCl3/Ar-plasma etching and crystallographic plasma-free HCl gas etching. The former etching can be done as vertic...
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| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2025-05-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0260753 |
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| Summary: | β-Ga2O3 air bridges on (100) substrates were
fabricated through a self-aligning process that used conventional anisotropic
BCl3/Ar-plasma etching and crystallographic plasma-free HCl gas
etching. The former etching can be done as vertical etching to expose the etched
sidewalls, whereas the latter etching enables horizontal etching that is aligned
with the (100) plane owing to the high etch resistance due to the lowest surface
energy density of the (100) plane. By combining the two orthogonal etching
techniques with other standard device fabrication processes, we were able to
create air bridges. We believe that the undercut etching method demonstrated
herein will facilitate the fabrication of micro-electromechanical systems. |
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| ISSN: | 2158-3226 |