Enabling the Angstrom Era: 2D material-based multi-bridge-channel complementary field effect transistors
Abstract This review presents a strategic roadmap for integrating two-dimensional materials (2DMs) into multi-bridge channel (MBC) complementary field-effect transistors (CFETs). It highlights key integration challenges, essential design considerations, and industrialization strategies for 2DM-MBC C...
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| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
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Nature Portfolio
2025-08-01
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| Series: | npj 2D Materials and Applications |
| Online Access: | https://doi.org/10.1038/s41699-025-00591-z |
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| author | Hoon Hahn Yoon Jin Young Park Yonas Tsegaye Megra Ju Hwan Baek Minuk Song Deji Akinwande Daewon Ha Dong-Ho Kang Hyeon-Jin Shin |
| author_facet | Hoon Hahn Yoon Jin Young Park Yonas Tsegaye Megra Ju Hwan Baek Minuk Song Deji Akinwande Daewon Ha Dong-Ho Kang Hyeon-Jin Shin |
| author_sort | Hoon Hahn Yoon |
| collection | DOAJ |
| description | Abstract This review presents a strategic roadmap for integrating two-dimensional materials (2DMs) into multi-bridge channel (MBC) complementary field-effect transistors (CFETs). It highlights key integration challenges, essential design considerations, and industrialization strategies for 2DM-MBC CFETs. These advances are expected to enable ultra-small, energy-efficient, and high-performance devices in the Angstrom Era that transcend the scaling limitations of silicon technology, paving the way for innovative applications in artificial intelligence (AI), the Internet of Things (IoT), and edge computing. |
| format | Article |
| id | doaj-art-1ef688b42257403d9ddec8f9a7e17d8f |
| institution | Kabale University |
| issn | 2397-7132 |
| language | English |
| publishDate | 2025-08-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | npj 2D Materials and Applications |
| spelling | doaj-art-1ef688b42257403d9ddec8f9a7e17d8f2025-08-20T03:43:22ZengNature Portfolionpj 2D Materials and Applications2397-71322025-08-019111110.1038/s41699-025-00591-zEnabling the Angstrom Era: 2D material-based multi-bridge-channel complementary field effect transistorsHoon Hahn Yoon0Jin Young Park1Yonas Tsegaye Megra2Ju Hwan Baek3Minuk Song4Deji Akinwande5Daewon Ha6Dong-Ho Kang7Hyeon-Jin Shin8Department of Semiconductor Engineering, Gwangju Institute of Science and Technology (GIST)Department of Semiconductor Engineering, Gwangju Institute of Science and Technology (GIST)Department of Semiconductor Engineering, Gwangju Institute of Science and Technology (GIST)Department of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology (GIST)Department of Semiconductor Engineering, Gwangju Institute of Science and Technology (GIST)Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at AustinAdvanced Device Research Lab, Semiconductor Research Center, Samsung ElectronicsDepartment of Semiconductor Engineering, Gwangju Institute of Science and Technology (GIST)Department of Semiconductor Engineering, Gwangju Institute of Science and Technology (GIST)Abstract This review presents a strategic roadmap for integrating two-dimensional materials (2DMs) into multi-bridge channel (MBC) complementary field-effect transistors (CFETs). It highlights key integration challenges, essential design considerations, and industrialization strategies for 2DM-MBC CFETs. These advances are expected to enable ultra-small, energy-efficient, and high-performance devices in the Angstrom Era that transcend the scaling limitations of silicon technology, paving the way for innovative applications in artificial intelligence (AI), the Internet of Things (IoT), and edge computing.https://doi.org/10.1038/s41699-025-00591-z |
| spellingShingle | Hoon Hahn Yoon Jin Young Park Yonas Tsegaye Megra Ju Hwan Baek Minuk Song Deji Akinwande Daewon Ha Dong-Ho Kang Hyeon-Jin Shin Enabling the Angstrom Era: 2D material-based multi-bridge-channel complementary field effect transistors npj 2D Materials and Applications |
| title | Enabling the Angstrom Era: 2D material-based multi-bridge-channel complementary field effect transistors |
| title_full | Enabling the Angstrom Era: 2D material-based multi-bridge-channel complementary field effect transistors |
| title_fullStr | Enabling the Angstrom Era: 2D material-based multi-bridge-channel complementary field effect transistors |
| title_full_unstemmed | Enabling the Angstrom Era: 2D material-based multi-bridge-channel complementary field effect transistors |
| title_short | Enabling the Angstrom Era: 2D material-based multi-bridge-channel complementary field effect transistors |
| title_sort | enabling the angstrom era 2d material based multi bridge channel complementary field effect transistors |
| url | https://doi.org/10.1038/s41699-025-00591-z |
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