Enhancing Hydrogen Diffusion in Silica Matrix by Using Metal Ion Implantation to Improve the Emission Properties of Silicon Nanocrystals
Efficient silicon-based light emitters continue to be a challenge. A great effort has been made in photonics to modify silicon in order to enhance its light emission properties. In this aspect silicon nanocrystals (Si-NCs) have become the main building block of silicon photonic (modulators, waveguid...
Saved in:
| Main Authors: | , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Wiley
2014-01-01
|
| Series: | Journal of Nanotechnology |
| Online Access: | http://dx.doi.org/10.1155/2014/863184 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1841524839133741056 |
|---|---|
| author | J. Bornacelli J. A. Reyes-Esqueda L. Rodríguez-Fernández J. L. Ruvalcaba-Sil F. J. Jaimes A. Oliver |
| author_facet | J. Bornacelli J. A. Reyes-Esqueda L. Rodríguez-Fernández J. L. Ruvalcaba-Sil F. J. Jaimes A. Oliver |
| author_sort | J. Bornacelli |
| collection | DOAJ |
| description | Efficient silicon-based light emitters continue to be a challenge. A great effort has been made in photonics to modify silicon in order to enhance its light emission properties. In this aspect silicon nanocrystals (Si-NCs) have become the main building block of silicon photonic (modulators, waveguide, source, and detectors). In this work, we present an approach based on implantation of Ag (or Au) ions and a proper thermal annealing in order to improve the photoluminescence (PL) emission of Si-NCs embedded in SiO2. The Si-NCs are obtained by ion implantation at MeV energy and nucleated at high depth into the silica matrix (1-2 μm under surface). Once Si-NCs are formed inside the SiO2 we implant metal ions at energies that do not damage the Si-NCs. We have observed by, PL and time-resolved PL, that ion metal implantation and a subsequent thermal annealing in a hydrogen-containing atmosphere could significantly increase the emission properties of Si-NCs. Elastic Recoil Detection measurements show that the samples with an enhanced luminescence emission present a higher hydrogen concentration. This suggests that ion metal implantation enhances the hydrogen diffusion into silica matrix allowing a better passivation of surface defects on Si NCs. |
| format | Article |
| id | doaj-art-1e9930cf19d94897ae4c90419d1d2cfe |
| institution | Kabale University |
| issn | 1687-9503 1687-9511 |
| language | English |
| publishDate | 2014-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Journal of Nanotechnology |
| spelling | doaj-art-1e9930cf19d94897ae4c90419d1d2cfe2025-02-03T05:47:12ZengWileyJournal of Nanotechnology1687-95031687-95112014-01-01201410.1155/2014/863184863184Enhancing Hydrogen Diffusion in Silica Matrix by Using Metal Ion Implantation to Improve the Emission Properties of Silicon NanocrystalsJ. Bornacelli0J. A. Reyes-Esqueda1L. Rodríguez-Fernández2J. L. Ruvalcaba-Sil3F. J. Jaimes4A. Oliver5Instituto de Física, Universidad Nacional Autónoma de México, 04510 México, DF, MexicoInstituto de Física, Universidad Nacional Autónoma de México, 04510 México, DF, MexicoInstituto de Física, Universidad Nacional Autónoma de México, 04510 México, DF, MexicoInstituto de Física, Universidad Nacional Autónoma de México, 04510 México, DF, MexicoInstituto de Física, Universidad Nacional Autónoma de México, 04510 México, DF, MexicoInstituto de Física, Universidad Nacional Autónoma de México, 04510 México, DF, MexicoEfficient silicon-based light emitters continue to be a challenge. A great effort has been made in photonics to modify silicon in order to enhance its light emission properties. In this aspect silicon nanocrystals (Si-NCs) have become the main building block of silicon photonic (modulators, waveguide, source, and detectors). In this work, we present an approach based on implantation of Ag (or Au) ions and a proper thermal annealing in order to improve the photoluminescence (PL) emission of Si-NCs embedded in SiO2. The Si-NCs are obtained by ion implantation at MeV energy and nucleated at high depth into the silica matrix (1-2 μm under surface). Once Si-NCs are formed inside the SiO2 we implant metal ions at energies that do not damage the Si-NCs. We have observed by, PL and time-resolved PL, that ion metal implantation and a subsequent thermal annealing in a hydrogen-containing atmosphere could significantly increase the emission properties of Si-NCs. Elastic Recoil Detection measurements show that the samples with an enhanced luminescence emission present a higher hydrogen concentration. This suggests that ion metal implantation enhances the hydrogen diffusion into silica matrix allowing a better passivation of surface defects on Si NCs.http://dx.doi.org/10.1155/2014/863184 |
| spellingShingle | J. Bornacelli J. A. Reyes-Esqueda L. Rodríguez-Fernández J. L. Ruvalcaba-Sil F. J. Jaimes A. Oliver Enhancing Hydrogen Diffusion in Silica Matrix by Using Metal Ion Implantation to Improve the Emission Properties of Silicon Nanocrystals Journal of Nanotechnology |
| title | Enhancing Hydrogen Diffusion in Silica Matrix by Using Metal Ion Implantation to Improve the Emission Properties of Silicon Nanocrystals |
| title_full | Enhancing Hydrogen Diffusion in Silica Matrix by Using Metal Ion Implantation to Improve the Emission Properties of Silicon Nanocrystals |
| title_fullStr | Enhancing Hydrogen Diffusion in Silica Matrix by Using Metal Ion Implantation to Improve the Emission Properties of Silicon Nanocrystals |
| title_full_unstemmed | Enhancing Hydrogen Diffusion in Silica Matrix by Using Metal Ion Implantation to Improve the Emission Properties of Silicon Nanocrystals |
| title_short | Enhancing Hydrogen Diffusion in Silica Matrix by Using Metal Ion Implantation to Improve the Emission Properties of Silicon Nanocrystals |
| title_sort | enhancing hydrogen diffusion in silica matrix by using metal ion implantation to improve the emission properties of silicon nanocrystals |
| url | http://dx.doi.org/10.1155/2014/863184 |
| work_keys_str_mv | AT jbornacelli enhancinghydrogendiffusioninsilicamatrixbyusingmetalionimplantationtoimprovetheemissionpropertiesofsiliconnanocrystals AT jareyesesqueda enhancinghydrogendiffusioninsilicamatrixbyusingmetalionimplantationtoimprovetheemissionpropertiesofsiliconnanocrystals AT lrodriguezfernandez enhancinghydrogendiffusioninsilicamatrixbyusingmetalionimplantationtoimprovetheemissionpropertiesofsiliconnanocrystals AT jlruvalcabasil enhancinghydrogendiffusioninsilicamatrixbyusingmetalionimplantationtoimprovetheemissionpropertiesofsiliconnanocrystals AT fjjaimes enhancinghydrogendiffusioninsilicamatrixbyusingmetalionimplantationtoimprovetheemissionpropertiesofsiliconnanocrystals AT aoliver enhancinghydrogendiffusioninsilicamatrixbyusingmetalionimplantationtoimprovetheemissionpropertiesofsiliconnanocrystals |