High-voltage kV-class AlN metal-semiconductor field-effect transistors on single-crystal AlN substrates
This letter reports the demonstration and electrical characterization of high-voltage AlN metal-semiconductor field-effect transistors (MESFETs) on single-crystal AlN substrates. Compared with AlN MESFETs on foreign substrates, the AlN-on-AlN MESFETs showed high breakdown voltages of over 2 kV for d...
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| Format: | Article |
| Language: | English |
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IOP Publishing
2024-01-01
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| Series: | Applied Physics Express |
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| Online Access: | https://doi.org/10.35848/1882-0786/ad85c0 |
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| _version_ | 1846118501583945728 |
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| author | Bingcheng Da Dinusha Herath Mudiyanselage Dawei Wang Ziyi He Houqiang Fu |
| author_facet | Bingcheng Da Dinusha Herath Mudiyanselage Dawei Wang Ziyi He Houqiang Fu |
| author_sort | Bingcheng Da |
| collection | DOAJ |
| description | This letter reports the demonstration and electrical characterization of high-voltage AlN metal-semiconductor field-effect transistors (MESFETs) on single-crystal AlN substrates. Compared with AlN MESFETs on foreign substrates, the AlN-on-AlN MESFETs showed high breakdown voltages of over 2 kV for drain-to-gate spacing of 15 μm and one of the highest average breakdown fields among reported AlN MESFETs. Additionally, the devices also exhibited decent drain saturation current and on/off ratio without complicated regrown or graded contact layers, which are several times higher than those of reported AlN-on-sapphire MESEFTs. This work is beneficial for the future development of ultrawide bandgap AlN power electronics. |
| format | Article |
| id | doaj-art-1d35afc29c4d47cf8f2d3ef89394a792 |
| institution | Kabale University |
| issn | 1882-0786 |
| language | English |
| publishDate | 2024-01-01 |
| publisher | IOP Publishing |
| record_format | Article |
| series | Applied Physics Express |
| spelling | doaj-art-1d35afc29c4d47cf8f2d3ef89394a7922024-12-17T17:00:13ZengIOP PublishingApplied Physics Express1882-07862024-01-01171010400210.35848/1882-0786/ad85c0High-voltage kV-class AlN metal-semiconductor field-effect transistors on single-crystal AlN substratesBingcheng Da0https://orcid.org/0009-0008-1528-2836Dinusha Herath Mudiyanselage1https://orcid.org/0000-0001-8611-9296Dawei Wang2https://orcid.org/0000-0003-2210-310XZiyi He3https://orcid.org/0000-0003-3833-6426Houqiang Fu4https://orcid.org/0000-0002-1125-8328School of Electrical, Computer, Energy Engineering, Arizona State University , Tempe, AZ 85281, United States of America ; houqiang@asu.eduSchool of Electrical, Computer, Energy Engineering, Arizona State University , Tempe, AZ 85281, United States of America ; houqiang@asu.eduSchool of Electrical, Computer, Energy Engineering, Arizona State University , Tempe, AZ 85281, United States of America ; houqiang@asu.eduSchool of Electrical, Computer, Energy Engineering, Arizona State University , Tempe, AZ 85281, United States of America ; houqiang@asu.eduSchool of Electrical, Computer, Energy Engineering, Arizona State University , Tempe, AZ 85281, United States of America ; houqiang@asu.eduThis letter reports the demonstration and electrical characterization of high-voltage AlN metal-semiconductor field-effect transistors (MESFETs) on single-crystal AlN substrates. Compared with AlN MESFETs on foreign substrates, the AlN-on-AlN MESFETs showed high breakdown voltages of over 2 kV for drain-to-gate spacing of 15 μm and one of the highest average breakdown fields among reported AlN MESFETs. Additionally, the devices also exhibited decent drain saturation current and on/off ratio without complicated regrown or graded contact layers, which are several times higher than those of reported AlN-on-sapphire MESEFTs. This work is beneficial for the future development of ultrawide bandgap AlN power electronics.https://doi.org/10.35848/1882-0786/ad85c0AlNmetal-semiconductor field-effect transistorstemperature-depedndent measurements |
| spellingShingle | Bingcheng Da Dinusha Herath Mudiyanselage Dawei Wang Ziyi He Houqiang Fu High-voltage kV-class AlN metal-semiconductor field-effect transistors on single-crystal AlN substrates Applied Physics Express AlN metal-semiconductor field-effect transistors temperature-depedndent measurements |
| title | High-voltage kV-class AlN metal-semiconductor field-effect transistors on single-crystal AlN substrates |
| title_full | High-voltage kV-class AlN metal-semiconductor field-effect transistors on single-crystal AlN substrates |
| title_fullStr | High-voltage kV-class AlN metal-semiconductor field-effect transistors on single-crystal AlN substrates |
| title_full_unstemmed | High-voltage kV-class AlN metal-semiconductor field-effect transistors on single-crystal AlN substrates |
| title_short | High-voltage kV-class AlN metal-semiconductor field-effect transistors on single-crystal AlN substrates |
| title_sort | high voltage kv class aln metal semiconductor field effect transistors on single crystal aln substrates |
| topic | AlN metal-semiconductor field-effect transistors temperature-depedndent measurements |
| url | https://doi.org/10.35848/1882-0786/ad85c0 |
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