Photoreflectance Spectroscopy Characterization of Ge/Si0.16Ge0.84 Multiple Quantum Wells on Ge Virtual Substrate

Photoreflectance Spectroscopy Characterization of Ge/Si0.16Ge0.84 Multiple Quantum Wells on Ge Virtual Substrate

We report a detailed characterization of a Ge/Si0.16Ge0.84 multiple quantum well (MQW) structure on Ge-on-Si virtual substrate (VS) grown by ultrahigh vacuum chemical vapor deposition by using temperature-dependent photoreflectance (PR) in the temperature range from 10 to 300 K. The PR spectra revea...

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Bibliographic Details
Main Authors: Hung-Pin Hsu, Pong-Hong Yang, Jeng-Kuang Huang, Po-Hung Wu, Ying-Sheng Huang, Cheng Li, Shi-Hao Huang, Kwong-Kau Tiong
Format: Article
Language:English
Published: Wiley 2013-01-01
Series:Advances in Condensed Matter Physics
Online Access:http://dx.doi.org/10.1155/2013/298190
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http://dx.doi.org/10.1155/2013/298190

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