CARBIDE FILM FILMS BY CHEMICAL DEPOSITION FROM THE GAS PHASE IN A REACTOR WITH COLD WALLS
The technique of obtaining and the first results of studying thin crystalline silicon carbide films by deposition from a gas phase in a reactor with cold walls is presented in the article. Trimethylchlorosilane was used as the precursor material, nitrogen was used as the carrier gas for the formatio...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | Russian |
| Published: |
North Caucasus Federal University
2022-05-01
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| Series: | Вестник Северо-Кавказского федерального университета |
| Subjects: | |
| Online Access: | https://vestnikskfu.elpub.ru/jour/article/view/851 |
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