CARBIDE FILM FILMS BY CHEMICAL DEPOSITION FROM THE GAS PHASE IN A REACTOR WITH COLD WALLS

The technique of obtaining and the first results of studying thin crystalline silicon carbide films by deposition from a gas phase in a reactor with cold walls is presented in the article. Trimethylchlorosilane was used as the precursor material, nitrogen was used as the carrier gas for the formatio...

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Main Authors: Vladimir Martens, Svyatoslav Krandievsky, Ilya Nikitin
Format: Article
Language:Russian
Published: North Caucasus Federal University 2022-05-01
Series:Вестник Северо-Кавказского федерального университета
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Online Access:https://vestnikskfu.elpub.ru/jour/article/view/851
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author Vladimir Martens
Svyatoslav Krandievsky
Ilya Nikitin
author_facet Vladimir Martens
Svyatoslav Krandievsky
Ilya Nikitin
author_sort Vladimir Martens
collection DOAJ
description The technique of obtaining and the first results of studying thin crystalline silicon carbide films by deposition from a gas phase in a reactor with cold walls is presented in the article. Trimethylchlorosilane was used as the precursor material, nitrogen was used as the carrier gas for the formation of the vapor-gas mixture. The films were produced on the Easytube 3000 chemical synthesis unit from the manufacturer Firstnano. X-ray patterns of synthesized samples were obtained and investigated.
format Article
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institution Kabale University
issn 2307-907X
language Russian
publishDate 2022-05-01
publisher North Caucasus Federal University
record_format Article
series Вестник Северо-Кавказского федерального университета
spelling doaj-art-1c3b1ce19d224e8e86a035a763b39f012025-08-20T03:59:21ZrusNorth Caucasus Federal UniversityВестник Северо-Кавказского федерального университета2307-907X2022-05-01032427849CARBIDE FILM FILMS BY CHEMICAL DEPOSITION FROM THE GAS PHASE IN A REACTOR WITH COLD WALLSVladimir Martens0Svyatoslav Krandievsky1Ilya Nikitin2North-Caucasus Federal UniversityNorth-Caucasus Federal UniversityNorth-Caucasus Federal UniversityThe technique of obtaining and the first results of studying thin crystalline silicon carbide films by deposition from a gas phase in a reactor with cold walls is presented in the article. Trimethylchlorosilane was used as the precursor material, nitrogen was used as the carrier gas for the formation of the vapor-gas mixture. The films were produced on the Easytube 3000 chemical synthesis unit from the manufacturer Firstnano. X-ray patterns of synthesized samples were obtained and investigated.https://vestnikskfu.elpub.ru/jour/article/view/851карбид кремниятонкие пленкихимическое осаждениеsilicon carbidethin filmschemical deposition
spellingShingle Vladimir Martens
Svyatoslav Krandievsky
Ilya Nikitin
CARBIDE FILM FILMS BY CHEMICAL DEPOSITION FROM THE GAS PHASE IN A REACTOR WITH COLD WALLS
Вестник Северо-Кавказского федерального университета
карбид кремния
тонкие пленки
химическое осаждение
silicon carbide
thin films
chemical deposition
title CARBIDE FILM FILMS BY CHEMICAL DEPOSITION FROM THE GAS PHASE IN A REACTOR WITH COLD WALLS
title_full CARBIDE FILM FILMS BY CHEMICAL DEPOSITION FROM THE GAS PHASE IN A REACTOR WITH COLD WALLS
title_fullStr CARBIDE FILM FILMS BY CHEMICAL DEPOSITION FROM THE GAS PHASE IN A REACTOR WITH COLD WALLS
title_full_unstemmed CARBIDE FILM FILMS BY CHEMICAL DEPOSITION FROM THE GAS PHASE IN A REACTOR WITH COLD WALLS
title_short CARBIDE FILM FILMS BY CHEMICAL DEPOSITION FROM THE GAS PHASE IN A REACTOR WITH COLD WALLS
title_sort carbide film films by chemical deposition from the gas phase in a reactor with cold walls
topic карбид кремния
тонкие пленки
химическое осаждение
silicon carbide
thin films
chemical deposition
url https://vestnikskfu.elpub.ru/jour/article/view/851
work_keys_str_mv AT vladimirmartens carbidefilmfilmsbychemicaldepositionfromthegasphaseinareactorwithcoldwalls
AT svyatoslavkrandievsky carbidefilmfilmsbychemicaldepositionfromthegasphaseinareactorwithcoldwalls
AT ilyanikitin carbidefilmfilmsbychemicaldepositionfromthegasphaseinareactorwithcoldwalls