Tellurium Doping Inducing Defect Passivation for Highly Effective Antimony Selenide Thin Film Solar Cell
Antimony selenide (Sb<sub>2</sub>Se<sub>3</sub>) is emerging as a promising photovoltaic material owing to its excellent photoelectric property. However, the low carrier transport efficiency, and detrimental surface oxidation of the Sb<sub>2</sub>Se<sub>3<...
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MDPI AG
2023-03-01
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| author | Guojie Chen Xiangye Li Muhammad Abbas Chen Fu Zhenghua Su Rong Tang Shuo Chen Ping Fan Guangxing Liang |
| author_facet | Guojie Chen Xiangye Li Muhammad Abbas Chen Fu Zhenghua Su Rong Tang Shuo Chen Ping Fan Guangxing Liang |
| author_sort | Guojie Chen |
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| description | Antimony selenide (Sb<sub>2</sub>Se<sub>3</sub>) is emerging as a promising photovoltaic material owing to its excellent photoelectric property. However, the low carrier transport efficiency, and detrimental surface oxidation of the Sb<sub>2</sub>Se<sub>3</sub> thin film greatly influenced the further improvement of the device efficiency. In this study, the introduction of tellurium (Te) can induce the benign growth orientation and the desirable Sb/Se atomic ratio in the Te-Sb<sub>2</sub>Se<sub>3</sub> thin film. Under various characterizations, it found that the Te-doping tended to form Sb<sub>2</sub>Te<sub>3</sub>-doped Sb<sub>2</sub>Se<sub>3</sub>, instead of alloy-type Sb<sub>2</sub>(Se,Te)<sub>3</sub>. After Te doping, the mitigation of surface oxidation has been confirmed by the Raman spectra. High-quality Te-Sb<sub>2</sub>Se<sub>3</sub> thin films with preferred [hk1] orientation, large grain size, and low defect density can be successfully prepared. Consequently, a 7.61% efficiency Sb<sub>2</sub>Se<sub>3</sub> solar cell has been achieved with a <i>V</i><sub>OC</sub> of 474 mV, a <i>J</i><sub>SC</sub> of 25.88 mA/cm<sup>2</sup>, and an FF of 64.09%. This work can provide an effective strategy for optimizing the physical properties of the Sb<sub>2</sub>Se<sub>3</sub> absorber, and therefore the further efficiency improvement of the Sb<sub>2</sub>Se<sub>3</sub> solar cells. |
| format | Article |
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| institution | Kabale University |
| issn | 2079-4991 |
| language | English |
| publishDate | 2023-03-01 |
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| series | Nanomaterials |
| spelling | doaj-art-1afb038c6c4740ab94600f7e681d1f262024-12-11T16:18:47ZengMDPI AGNanomaterials2079-49912023-03-01137124010.3390/nano13071240Tellurium Doping Inducing Defect Passivation for Highly Effective Antimony Selenide Thin Film Solar CellGuojie Chen0Xiangye Li1Muhammad Abbas2Chen Fu3Zhenghua Su4Rong Tang5Shuo Chen6Ping Fan7Guangxing Liang8Shenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, ChinaShenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, ChinaShenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, ChinaShenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, ChinaShenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, ChinaSchool of New Energy and Energy Conservation and Environmental Protection Engineering, Foshan Polytechnic, Foshan 528137, ChinaShenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, ChinaShenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, ChinaShenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, ChinaAntimony selenide (Sb<sub>2</sub>Se<sub>3</sub>) is emerging as a promising photovoltaic material owing to its excellent photoelectric property. However, the low carrier transport efficiency, and detrimental surface oxidation of the Sb<sub>2</sub>Se<sub>3</sub> thin film greatly influenced the further improvement of the device efficiency. In this study, the introduction of tellurium (Te) can induce the benign growth orientation and the desirable Sb/Se atomic ratio in the Te-Sb<sub>2</sub>Se<sub>3</sub> thin film. Under various characterizations, it found that the Te-doping tended to form Sb<sub>2</sub>Te<sub>3</sub>-doped Sb<sub>2</sub>Se<sub>3</sub>, instead of alloy-type Sb<sub>2</sub>(Se,Te)<sub>3</sub>. After Te doping, the mitigation of surface oxidation has been confirmed by the Raman spectra. High-quality Te-Sb<sub>2</sub>Se<sub>3</sub> thin films with preferred [hk1] orientation, large grain size, and low defect density can be successfully prepared. Consequently, a 7.61% efficiency Sb<sub>2</sub>Se<sub>3</sub> solar cell has been achieved with a <i>V</i><sub>OC</sub> of 474 mV, a <i>J</i><sub>SC</sub> of 25.88 mA/cm<sup>2</sup>, and an FF of 64.09%. This work can provide an effective strategy for optimizing the physical properties of the Sb<sub>2</sub>Se<sub>3</sub> absorber, and therefore the further efficiency improvement of the Sb<sub>2</sub>Se<sub>3</sub> solar cells.https://www.mdpi.com/2079-4991/13/7/1240Sb<sub>2</sub>Se<sub>3</sub>Te dopingdefects passivationsolar cellefficiency |
| spellingShingle | Guojie Chen Xiangye Li Muhammad Abbas Chen Fu Zhenghua Su Rong Tang Shuo Chen Ping Fan Guangxing Liang Tellurium Doping Inducing Defect Passivation for Highly Effective Antimony Selenide Thin Film Solar Cell Nanomaterials Sb<sub>2</sub>Se<sub>3</sub> Te doping defects passivation solar cell efficiency |
| title | Tellurium Doping Inducing Defect Passivation for Highly Effective Antimony Selenide Thin Film Solar Cell |
| title_full | Tellurium Doping Inducing Defect Passivation for Highly Effective Antimony Selenide Thin Film Solar Cell |
| title_fullStr | Tellurium Doping Inducing Defect Passivation for Highly Effective Antimony Selenide Thin Film Solar Cell |
| title_full_unstemmed | Tellurium Doping Inducing Defect Passivation for Highly Effective Antimony Selenide Thin Film Solar Cell |
| title_short | Tellurium Doping Inducing Defect Passivation for Highly Effective Antimony Selenide Thin Film Solar Cell |
| title_sort | tellurium doping inducing defect passivation for highly effective antimony selenide thin film solar cell |
| topic | Sb<sub>2</sub>Se<sub>3</sub> Te doping defects passivation solar cell efficiency |
| url | https://www.mdpi.com/2079-4991/13/7/1240 |
| work_keys_str_mv | AT guojiechen telluriumdopinginducingdefectpassivationforhighlyeffectiveantimonyselenidethinfilmsolarcell AT xiangyeli telluriumdopinginducingdefectpassivationforhighlyeffectiveantimonyselenidethinfilmsolarcell AT muhammadabbas telluriumdopinginducingdefectpassivationforhighlyeffectiveantimonyselenidethinfilmsolarcell AT chenfu telluriumdopinginducingdefectpassivationforhighlyeffectiveantimonyselenidethinfilmsolarcell AT zhenghuasu telluriumdopinginducingdefectpassivationforhighlyeffectiveantimonyselenidethinfilmsolarcell AT rongtang telluriumdopinginducingdefectpassivationforhighlyeffectiveantimonyselenidethinfilmsolarcell AT shuochen telluriumdopinginducingdefectpassivationforhighlyeffectiveantimonyselenidethinfilmsolarcell AT pingfan telluriumdopinginducingdefectpassivationforhighlyeffectiveantimonyselenidethinfilmsolarcell AT guangxingliang telluriumdopinginducingdefectpassivationforhighlyeffectiveantimonyselenidethinfilmsolarcell |