High‐performance visible and near‐infrared dual‐band photodetector based on anisotropic 2D NbS3 with perpendicularly reversed polarization behaviors
Abstract Dual‐band photodetectors exhibit considerable advantages in target discrimination and navigation compared to single‐band devices in complex circumstances. However, it remains a major challenge to overcome the limitations of traditional devices in terms of their integration with multiple lig...
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2025-01-01
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| Online Access: | https://doi.org/10.1002/inf2.12625 |
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| author | Jidong Liu Haibo Gan Qiaoyan Hao Yonghong Zeng Youning Gong Jiaqi Zhu Jiarui Huang Fei Liu Wenjing Zhang |
| author_facet | Jidong Liu Haibo Gan Qiaoyan Hao Yonghong Zeng Youning Gong Jiaqi Zhu Jiarui Huang Fei Liu Wenjing Zhang |
| author_sort | Jidong Liu |
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| description | Abstract Dual‐band photodetectors exhibit considerable advantages in target discrimination and navigation compared to single‐band devices in complex circumstances. However, it remains a major challenge to overcome the limitations of traditional devices in terms of their integration with multiple light‐absorbing layers and complicated optical components. In this study, a visible and near‐infrared (NIR) dual‐band polarimetric photodetector with a single light‐absorbing layer is constructed by utilizing the distinctive conversion of linear dichroism (LD) polarity in two‐dimensional niobium trisulfide (NbS3). The NbS3 photodetector exhibits selective detection behaviors in the visible and NIR bands, in which by switching the polarization angle of the incident light from 0° to 90°, photocurrent decreases in the visible region, and increases in the NIR region. Specifically, the degrees of linear polarization of photocurrent are 0.59 at 450 nm and −0.47 at 1300 nm, respectively. The opposite photoresponse in the visible and NIR bands of the photodetector significantly enhances the dual‐band information recognition. Therefore, clear visible and NIR dual‐band polarimetric imaging is accurately realized based on the NbS3 photodetector taking advantage of its fast response speed of 28 μs. Such anisotropic materials, with unique LD conversion features, can facilitate selective modulation between the visible and NIR spectral ranges and promote the development of next‐generation multi‐dimensional photodetection for various applications, including com/puter vision, surveillance, and biomedical imaging. |
| format | Article |
| id | doaj-art-19f11d9ca92d4b058e40d337fbda1807 |
| institution | Kabale University |
| issn | 2567-3165 |
| language | English |
| publishDate | 2025-01-01 |
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| spelling | doaj-art-19f11d9ca92d4b058e40d337fbda18072025-01-17T04:48:29ZengWileyInfoMat2567-31652025-01-0171n/an/a10.1002/inf2.12625High‐performance visible and near‐infrared dual‐band photodetector based on anisotropic 2D NbS3 with perpendicularly reversed polarization behaviorsJidong Liu0Haibo Gan1Qiaoyan Hao2Yonghong Zeng3Youning Gong4Jiaqi Zhu5Jiarui Huang6Fei Liu7Wenjing Zhang8State Key Laboratory of Radio Frequency Heterogeneous Integration, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics Shenzhen University Shenzhen the People's Republic of ChinaState Key Laboratory of Radio Frequency Heterogeneous Integration, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics Shenzhen University Shenzhen the People's Republic of ChinaState Key Laboratory of Radio Frequency Heterogeneous Integration, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics Shenzhen University Shenzhen the People's Republic of ChinaCollege of Integrated Circuits and Optoelectronic Chips Shenzhen Technology University Shenzhen the People's Republic of ChinaCollege of Electronics and Information Engineering Shenzhen University Shenzhen the People's Republic of ChinaCollege of Electronics and Information Engineering Shenzhen University Shenzhen the People's Republic of ChinaState Key Laboratory of Radio Frequency Heterogeneous Integration, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics Shenzhen University Shenzhen the People's Republic of ChinaState Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology Sun Yat‐sen University Guangzhou the People's Republic of ChinaState Key Laboratory of Radio Frequency Heterogeneous Integration, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics Shenzhen University Shenzhen the People's Republic of ChinaAbstract Dual‐band photodetectors exhibit considerable advantages in target discrimination and navigation compared to single‐band devices in complex circumstances. However, it remains a major challenge to overcome the limitations of traditional devices in terms of their integration with multiple light‐absorbing layers and complicated optical components. In this study, a visible and near‐infrared (NIR) dual‐band polarimetric photodetector with a single light‐absorbing layer is constructed by utilizing the distinctive conversion of linear dichroism (LD) polarity in two‐dimensional niobium trisulfide (NbS3). The NbS3 photodetector exhibits selective detection behaviors in the visible and NIR bands, in which by switching the polarization angle of the incident light from 0° to 90°, photocurrent decreases in the visible region, and increases in the NIR region. Specifically, the degrees of linear polarization of photocurrent are 0.59 at 450 nm and −0.47 at 1300 nm, respectively. The opposite photoresponse in the visible and NIR bands of the photodetector significantly enhances the dual‐band information recognition. Therefore, clear visible and NIR dual‐band polarimetric imaging is accurately realized based on the NbS3 photodetector taking advantage of its fast response speed of 28 μs. Such anisotropic materials, with unique LD conversion features, can facilitate selective modulation between the visible and NIR spectral ranges and promote the development of next‐generation multi‐dimensional photodetection for various applications, including com/puter vision, surveillance, and biomedical imaging.https://doi.org/10.1002/inf2.126252D materialsdual‐bandlinear dichroism conversionNbS3polarized photodetectors |
| spellingShingle | Jidong Liu Haibo Gan Qiaoyan Hao Yonghong Zeng Youning Gong Jiaqi Zhu Jiarui Huang Fei Liu Wenjing Zhang High‐performance visible and near‐infrared dual‐band photodetector based on anisotropic 2D NbS3 with perpendicularly reversed polarization behaviors InfoMat 2D materials dual‐band linear dichroism conversion NbS3 polarized photodetectors |
| title | High‐performance visible and near‐infrared dual‐band photodetector based on anisotropic 2D NbS3 with perpendicularly reversed polarization behaviors |
| title_full | High‐performance visible and near‐infrared dual‐band photodetector based on anisotropic 2D NbS3 with perpendicularly reversed polarization behaviors |
| title_fullStr | High‐performance visible and near‐infrared dual‐band photodetector based on anisotropic 2D NbS3 with perpendicularly reversed polarization behaviors |
| title_full_unstemmed | High‐performance visible and near‐infrared dual‐band photodetector based on anisotropic 2D NbS3 with perpendicularly reversed polarization behaviors |
| title_short | High‐performance visible and near‐infrared dual‐band photodetector based on anisotropic 2D NbS3 with perpendicularly reversed polarization behaviors |
| title_sort | high performance visible and near infrared dual band photodetector based on anisotropic 2d nbs3 with perpendicularly reversed polarization behaviors |
| topic | 2D materials dual‐band linear dichroism conversion NbS3 polarized photodetectors |
| url | https://doi.org/10.1002/inf2.12625 |
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