Progress in Performance of AlGaN‐Based Ultraviolet Light Emitting Diodes
Abstract AlGaN‐based ultraviolet light‐emitting diodes (UV‐LEDs) have the advantages of mercury (Hg) pollution free, small size, high efficiency, and so on, and are widely used in military, medical, and industrial fields, which are considered to be the most promising alternative to the traditional H...
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| Format: | Article |
| Language: | English |
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Wiley-VCH
2025-01-01
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| Series: | Advanced Electronic Materials |
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| Online Access: | https://doi.org/10.1002/aelm.202300840 |
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| _version_ | 1841548899942137856 |
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| author | Jing Lang Fujun Xu Jiaming Wang Lisheng Zhang Xuzhou Fang Ziyao Zhang Xueqi Guo Chen Ji Chengzhi Ji Fuyun Tan Yong Wu Xuelin Yang Xiangning Kang Zhixin Qin Ning Tang Xinqiang Wang Weikun Ge Bo Shen |
| author_facet | Jing Lang Fujun Xu Jiaming Wang Lisheng Zhang Xuzhou Fang Ziyao Zhang Xueqi Guo Chen Ji Chengzhi Ji Fuyun Tan Yong Wu Xuelin Yang Xiangning Kang Zhixin Qin Ning Tang Xinqiang Wang Weikun Ge Bo Shen |
| author_sort | Jing Lang |
| collection | DOAJ |
| description | Abstract AlGaN‐based ultraviolet light‐emitting diodes (UV‐LEDs) have the advantages of mercury (Hg) pollution free, small size, high efficiency, and so on, and are widely used in military, medical, and industrial fields, which are considered to be the most promising alternative to the traditional Hg lamps. Great efforts are made over the past few decades to improve the device performance, thereby meeting the commercial production and application requirements of UV‐LEDs, which is always accompanied by a series of interesting physical topics. In this review, the recent research progress in performance of AlGaN‐based UV‐LEDs is summarized from the perspectives of electrical injection, electro‐optical conversion, and light extraction, which are responsible for the operation of devices. The detailed discussions include the major challenges, the corresponding technological breakthroughs, and also the outlook of material growth, energy band modulation, as well as device fabrication involved in UV‐LEDs, which are expected to be helpful for the thorough comprehension of device physics and further development of AlGaN‐based UV‐LEDs. |
| format | Article |
| id | doaj-art-199b4a8195314758a1794fe72311c0dd |
| institution | Kabale University |
| issn | 2199-160X |
| language | English |
| publishDate | 2025-01-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Electronic Materials |
| spelling | doaj-art-199b4a8195314758a1794fe72311c0dd2025-01-10T13:40:16ZengWiley-VCHAdvanced Electronic Materials2199-160X2025-01-01111n/an/a10.1002/aelm.202300840Progress in Performance of AlGaN‐Based Ultraviolet Light Emitting DiodesJing Lang0Fujun Xu1Jiaming Wang2Lisheng Zhang3Xuzhou Fang4Ziyao Zhang5Xueqi Guo6Chen Ji7Chengzhi Ji8Fuyun Tan9Yong Wu10Xuelin Yang11Xiangning Kang12Zhixin Qin13Ning Tang14Xinqiang Wang15Weikun Ge16Bo Shen17State Key Laboratory of Artificial Microstructure and Mesoscopic Physics School of Physics Peking University Beijing 100871 ChinaState Key Laboratory of Artificial Microstructure and Mesoscopic Physics School of Physics Peking University Beijing 100871 ChinaState Key Laboratory of Artificial Microstructure and Mesoscopic Physics School of Physics Peking University Beijing 100871 ChinaState Key Laboratory of Artificial Microstructure and Mesoscopic Physics School of Physics Peking University Beijing 100871 ChinaState Key Laboratory of Artificial Microstructure and Mesoscopic Physics School of Physics Peking University Beijing 100871 ChinaState Key Laboratory of Artificial Microstructure and Mesoscopic Physics School of Physics Peking University Beijing 100871 ChinaState Key Laboratory of Artificial Microstructure and Mesoscopic Physics School of Physics Peking University Beijing 100871 ChinaState Key Laboratory of Artificial Microstructure and Mesoscopic Physics School of Physics Peking University Beijing 100871 ChinaState Key Laboratory of Artificial Microstructure and Mesoscopic Physics School of Physics Peking University Beijing 100871 ChinaState Key Laboratory of Artificial Microstructure and Mesoscopic Physics School of Physics Peking University Beijing 100871 ChinaState Key Laboratory of Artificial Microstructure and Mesoscopic Physics School of Physics Peking University Beijing 100871 ChinaState Key Laboratory of Artificial Microstructure and Mesoscopic Physics School of Physics Peking University Beijing 100871 ChinaState Key Laboratory of Artificial Microstructure and Mesoscopic Physics School of Physics Peking University Beijing 100871 ChinaState Key Laboratory of Artificial Microstructure and Mesoscopic Physics School of Physics Peking University Beijing 100871 ChinaState Key Laboratory of Artificial Microstructure and Mesoscopic Physics School of Physics Peking University Beijing 100871 ChinaState Key Laboratory of Artificial Microstructure and Mesoscopic Physics School of Physics Peking University Beijing 100871 ChinaState Key Laboratory of Artificial Microstructure and Mesoscopic Physics School of Physics Peking University Beijing 100871 ChinaState Key Laboratory of Artificial Microstructure and Mesoscopic Physics School of Physics Peking University Beijing 100871 ChinaAbstract AlGaN‐based ultraviolet light‐emitting diodes (UV‐LEDs) have the advantages of mercury (Hg) pollution free, small size, high efficiency, and so on, and are widely used in military, medical, and industrial fields, which are considered to be the most promising alternative to the traditional Hg lamps. Great efforts are made over the past few decades to improve the device performance, thereby meeting the commercial production and application requirements of UV‐LEDs, which is always accompanied by a series of interesting physical topics. In this review, the recent research progress in performance of AlGaN‐based UV‐LEDs is summarized from the perspectives of electrical injection, electro‐optical conversion, and light extraction, which are responsible for the operation of devices. The detailed discussions include the major challenges, the corresponding technological breakthroughs, and also the outlook of material growth, energy band modulation, as well as device fabrication involved in UV‐LEDs, which are expected to be helpful for the thorough comprehension of device physics and further development of AlGaN‐based UV‐LEDs.https://doi.org/10.1002/aelm.202300840AlGaN‐based UV‐LEDsdevice performanceelectrical injectionelectro‐optical conversionlight extraction |
| spellingShingle | Jing Lang Fujun Xu Jiaming Wang Lisheng Zhang Xuzhou Fang Ziyao Zhang Xueqi Guo Chen Ji Chengzhi Ji Fuyun Tan Yong Wu Xuelin Yang Xiangning Kang Zhixin Qin Ning Tang Xinqiang Wang Weikun Ge Bo Shen Progress in Performance of AlGaN‐Based Ultraviolet Light Emitting Diodes Advanced Electronic Materials AlGaN‐based UV‐LEDs device performance electrical injection electro‐optical conversion light extraction |
| title | Progress in Performance of AlGaN‐Based Ultraviolet Light Emitting Diodes |
| title_full | Progress in Performance of AlGaN‐Based Ultraviolet Light Emitting Diodes |
| title_fullStr | Progress in Performance of AlGaN‐Based Ultraviolet Light Emitting Diodes |
| title_full_unstemmed | Progress in Performance of AlGaN‐Based Ultraviolet Light Emitting Diodes |
| title_short | Progress in Performance of AlGaN‐Based Ultraviolet Light Emitting Diodes |
| title_sort | progress in performance of algan based ultraviolet light emitting diodes |
| topic | AlGaN‐based UV‐LEDs device performance electrical injection electro‐optical conversion light extraction |
| url | https://doi.org/10.1002/aelm.202300840 |
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