Ultrahigh Breakdown Field in Gallium (III) Oxide Dielectric Structure Fabricated by Novel Aerosol Deposition Method
With the increasing demand for modern high‐voltage electronic devices in electric vehicles and renewable‐energy systems, power semiconductor devices with high breakdown fields are becoming essential. β‐Gallium oxide (Ga2O3), which has a theoretical breakdown field of 8 MV cm−1, is being studied as a...
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| Format: | Article |
| Language: | English |
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Wiley-VCH
2024-12-01
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| Series: | Small Structures |
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| Online Access: | https://doi.org/10.1002/sstr.202400321 |
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| author | Jun‐Woo Lee Jong Ho Won Woosup Kim Jwa‐Bin Jeon Myung‐Yeon Cho Sunghoon Kim Minkyung Kim Chulhwan Park Weon Ho Shin Kanghee Won Sang‐Mo Koo Jong‐Min Oh |
| author_facet | Jun‐Woo Lee Jong Ho Won Woosup Kim Jwa‐Bin Jeon Myung‐Yeon Cho Sunghoon Kim Minkyung Kim Chulhwan Park Weon Ho Shin Kanghee Won Sang‐Mo Koo Jong‐Min Oh |
| author_sort | Jun‐Woo Lee |
| collection | DOAJ |
| description | With the increasing demand for modern high‐voltage electronic devices in electric vehicles and renewable‐energy systems, power semiconductor devices with high breakdown fields are becoming essential. β‐Gallium oxide (Ga2O3), which has a theoretical breakdown field of 8 MV cm−1, is being studied as a next‐generation power‐switch material. However, realizing a breakdown field close to this theoretical value remains challenging. In this study, an aerosol deposition‐manufactured Ga2O3 film boasting an extremely high breakdown field, achieved through thickness optimization, heat treatment, and a unique nozzle‐tilting method, is developed. This study explores the effect of oxygen vacancies on the dielectric constant, breakdown field, and microstructure of Ga2O3 films. Through these methods, Ga2O3 films with a denser (98.88%) and uniform surface, made less affected by oxygen vacancies through nozzle tilting and post‐annealing at 800 °C, are produced, resulting in appropriate dielectric constants (9.3 at 10 kHz), low leakage currents (5.8 × 10−11 A cm−2 at 20 kV cm−1), and a very high breakdown field of 5.5 MV cm−1. The results of this study suggest that aerosol‐deposited Ga2O3 layers have great potential to enable power switches with reliable switching. |
| format | Article |
| id | doaj-art-182a556792b5492887f217e7baf1c2d9 |
| institution | Kabale University |
| issn | 2688-4062 |
| language | English |
| publishDate | 2024-12-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Small Structures |
| spelling | doaj-art-182a556792b5492887f217e7baf1c2d92024-12-05T19:18:14ZengWiley-VCHSmall Structures2688-40622024-12-01512n/an/a10.1002/sstr.202400321Ultrahigh Breakdown Field in Gallium (III) Oxide Dielectric Structure Fabricated by Novel Aerosol Deposition MethodJun‐Woo Lee0Jong Ho Won1Woosup Kim2Jwa‐Bin Jeon3Myung‐Yeon Cho4Sunghoon Kim5Minkyung Kim6Chulhwan Park7Weon Ho Shin8Kanghee Won9Sang‐Mo Koo10Jong‐Min Oh11Department of Electronic Materials Engineering Kwangwoon University Seoul 01897 Republic of KoreaDepartment of Energy Engineering Dankook University Chungnam 31116 Republic of KoreaDepartment of Information Display Kyung Hee University Seoul 02447 Republic of KoreaDepartment of Electronic Materials Engineering Kwangwoon University Seoul 01897 Republic of KoreaMemory Business Division Samsung Electronics Gyeonggi‐do 18479 Republic of KoreaDepartment of Applied Chemistry Dong‐Eui University Busan 47227 Republic of KoreaDepartment of Electronic Materials Engineering Kwangwoon University Seoul 01897 Republic of KoreaDepartment of Chemical Engineering Kwangwoon University Seoul 01897 Republic of KoreaDepartment of Electronic Materials Engineering Kwangwoon University Seoul 01897 Republic of KoreaDepartment of Information Display Kyung Hee University Seoul 02447 Republic of KoreaDepartment of Electronic Materials Engineering Kwangwoon University Seoul 01897 Republic of KoreaDepartment of Electronic Materials Engineering Kwangwoon University Seoul 01897 Republic of KoreaWith the increasing demand for modern high‐voltage electronic devices in electric vehicles and renewable‐energy systems, power semiconductor devices with high breakdown fields are becoming essential. β‐Gallium oxide (Ga2O3), which has a theoretical breakdown field of 8 MV cm−1, is being studied as a next‐generation power‐switch material. However, realizing a breakdown field close to this theoretical value remains challenging. In this study, an aerosol deposition‐manufactured Ga2O3 film boasting an extremely high breakdown field, achieved through thickness optimization, heat treatment, and a unique nozzle‐tilting method, is developed. This study explores the effect of oxygen vacancies on the dielectric constant, breakdown field, and microstructure of Ga2O3 films. Through these methods, Ga2O3 films with a denser (98.88%) and uniform surface, made less affected by oxygen vacancies through nozzle tilting and post‐annealing at 800 °C, are produced, resulting in appropriate dielectric constants (9.3 at 10 kHz), low leakage currents (5.8 × 10−11 A cm−2 at 20 kV cm−1), and a very high breakdown field of 5.5 MV cm−1. The results of this study suggest that aerosol‐deposited Ga2O3 layers have great potential to enable power switches with reliable switching.https://doi.org/10.1002/sstr.202400321aerosol depositionsbreakdown fieldsGa2O3 filmsnozzle‐tilting methodsoxygen vacanciesthickness dependences |
| spellingShingle | Jun‐Woo Lee Jong Ho Won Woosup Kim Jwa‐Bin Jeon Myung‐Yeon Cho Sunghoon Kim Minkyung Kim Chulhwan Park Weon Ho Shin Kanghee Won Sang‐Mo Koo Jong‐Min Oh Ultrahigh Breakdown Field in Gallium (III) Oxide Dielectric Structure Fabricated by Novel Aerosol Deposition Method Small Structures aerosol depositions breakdown fields Ga2O3 films nozzle‐tilting methods oxygen vacancies thickness dependences |
| title | Ultrahigh Breakdown Field in Gallium (III) Oxide Dielectric Structure Fabricated by Novel Aerosol Deposition Method |
| title_full | Ultrahigh Breakdown Field in Gallium (III) Oxide Dielectric Structure Fabricated by Novel Aerosol Deposition Method |
| title_fullStr | Ultrahigh Breakdown Field in Gallium (III) Oxide Dielectric Structure Fabricated by Novel Aerosol Deposition Method |
| title_full_unstemmed | Ultrahigh Breakdown Field in Gallium (III) Oxide Dielectric Structure Fabricated by Novel Aerosol Deposition Method |
| title_short | Ultrahigh Breakdown Field in Gallium (III) Oxide Dielectric Structure Fabricated by Novel Aerosol Deposition Method |
| title_sort | ultrahigh breakdown field in gallium iii oxide dielectric structure fabricated by novel aerosol deposition method |
| topic | aerosol depositions breakdown fields Ga2O3 films nozzle‐tilting methods oxygen vacancies thickness dependences |
| url | https://doi.org/10.1002/sstr.202400321 |
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