Simulation and Experimental Study of the Single-Pulse Femtosecond Laser Ablation Morphology of GaN Films

Simulation and Experimental Study of the Single-Pulse Femtosecond Laser Ablation Morphology of GaN Films

Gallium nitride (GaN) exhibits distinctive physical and chemical properties that render it indispensable in a multitude of electronic and optoelectronic devices. Given that GaN is a typical hard and brittle material that is difficult to machine, femtosecond laser technology provides an effective and...

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Bibliographic Details
Main Authors: Mingyuan Wang, Tong Zhang, Yanping Yuan, Zhiyong Wang, Yanlei Liu, Lin Chen
Format: Article
Language:English
Published: MDPI AG 2025-01-01
Series:Micromachines
Subjects:
femtosecond laser
GaN film
multiphysics model
ablation morphology
Online Access:https://www.mdpi.com/2072-666X/16/1/85
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