Elastic Relaxation of Coherent InGaN/GaN Interfaces at the Microwire LED Sidewall

Elastic Relaxation of Coherent InGaN/GaN Interfaces at the Microwire LED Sidewall

Abstract Elastic relaxation of lattice misfit strain via traction‐free surface results in complex 3D strain distribution and morphological modification at the boundary of epitaxial heterostructure. While this phenomenon is extensively studied, the influence of the interface coherency constraining th...

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Bibliographic Details
Main Authors: Jongil Kim, Jinwook Yeo, Bumsu Park, Jeehun Jeong, Seunghwa Ryu, Sang Ho Oh
Format: Article
Language:English
Published: Wiley 2025-05-01
Series:Advanced Science
Subjects:
GaN
interface
light emitting diodes
microwire
strain
transmission electron microscopy
Online Access:https://doi.org/10.1002/advs.202408736
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