Optimization design of insulation and parasitic parameters for medium-voltage hybrid ANPC busbars
The busbar, serving as a critical power transmission component in power electronic converters, fulfills essential functions including interconnection of power devices, capacitors, terminals, and insulation. To mitigate parasitic parameters and device stresses, converter circuits must be integrated t...
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| Format: | Article |
| Language: | zho |
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Editorial Department of Electric Power Engineering Technology
2025-07-01
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| Series: | 电力工程技术 |
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| Online Access: | https://doi.org/10.12158/j.2096-3203.2025.04.006 |
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| author | Yiping ZHAO Xiaobo DONG Haoyuan JIN Gan WANG Laili WANG Hong ZHANG |
| author_facet | Yiping ZHAO Xiaobo DONG Haoyuan JIN Gan WANG Laili WANG Hong ZHANG |
| author_sort | Yiping ZHAO |
| collection | DOAJ |
| description | The busbar, serving as a critical power transmission component in power electronic converters, fulfills essential functions including interconnection of power devices, capacitors, terminals, and insulation. To mitigate parasitic parameters and device stresses, converter circuits must be integrated through busbars. This paper focuses on the ANPC topology composed of a 15 kV SiC metal oxide semiconductor field effect transistor (SiC MOSFET) and a series-connected 6.5 kV Si insulated gate bipolar transistor (Si IGBT), investigating optimized busbar design through dimensional arrangement, layer stacking sequence, and terminal positioning. A three-dimensional electromagnetic model of medium-voltage multi-device integrated busbars is established using finite element simulation software. Parametric analysis is conducted to optimize device spacing and layer structures, proposing a busbar layout strategy tailored for hybrid ANPC topologies. Simulation results demonstrate that the optimized design effectively reduces system parasitic while validating reasonable electric field distribution under high-frequency switching conditions. Experimental tests on a prototype platform confirm that the optimized busbar exhibits superior insulation performance at critical nodes and enhanced overall reliability compared to conventional designs. |
| format | Article |
| id | doaj-art-1646c3af7d4a48ebb887cb59d5a5d2c8 |
| institution | Kabale University |
| issn | 2096-3203 |
| language | zho |
| publishDate | 2025-07-01 |
| publisher | Editorial Department of Electric Power Engineering Technology |
| record_format | Article |
| series | 电力工程技术 |
| spelling | doaj-art-1646c3af7d4a48ebb887cb59d5a5d2c82025-08-20T03:56:17ZzhoEditorial Department of Electric Power Engineering Technology电力工程技术2096-32032025-07-01444526110.12158/j.2096-3203.2025.04.006250228170Optimization design of insulation and parasitic parameters for medium-voltage hybrid ANPC busbarsYiping ZHAO0Xiaobo DONG1Haoyuan JIN2Gan WANG3Laili WANG4Hong ZHANG5Xi'an Jiaotong University (State Key Laboratory of Electrical Insulation and Power Equipment), Xi'an 710049, ChinaXi'an Jiaotong University (State Key Laboratory of Electrical Insulation and Power Equipment), Xi'an 710049, ChinaXi'an Jiaotong University (State Key Laboratory of Electrical Insulation and Power Equipment), Xi'an 710049, ChinaXi'an Jiaotong University (State Key Laboratory of Electrical Insulation and Power Equipment), Xi'an 710049, ChinaXi'an Jiaotong University (State Key Laboratory of Electrical Insulation and Power Equipment), Xi'an 710049, ChinaXi'an Jiaotong University (State Key Laboratory of Electrical Insulation and Power Equipment), Xi'an 710049, ChinaThe busbar, serving as a critical power transmission component in power electronic converters, fulfills essential functions including interconnection of power devices, capacitors, terminals, and insulation. To mitigate parasitic parameters and device stresses, converter circuits must be integrated through busbars. This paper focuses on the ANPC topology composed of a 15 kV SiC metal oxide semiconductor field effect transistor (SiC MOSFET) and a series-connected 6.5 kV Si insulated gate bipolar transistor (Si IGBT), investigating optimized busbar design through dimensional arrangement, layer stacking sequence, and terminal positioning. A three-dimensional electromagnetic model of medium-voltage multi-device integrated busbars is established using finite element simulation software. Parametric analysis is conducted to optimize device spacing and layer structures, proposing a busbar layout strategy tailored for hybrid ANPC topologies. Simulation results demonstrate that the optimized design effectively reduces system parasitic while validating reasonable electric field distribution under high-frequency switching conditions. Experimental tests on a prototype platform confirm that the optimized busbar exhibits superior insulation performance at critical nodes and enhanced overall reliability compared to conventional designs.https://doi.org/10.12158/j.2096-3203.2025.04.006medium-voltage converterlaminated busbarfinite element simulationparasitic parametersinsulationsic metal oxide semiconductor field effect transistor (sic mosfet) |
| spellingShingle | Yiping ZHAO Xiaobo DONG Haoyuan JIN Gan WANG Laili WANG Hong ZHANG Optimization design of insulation and parasitic parameters for medium-voltage hybrid ANPC busbars 电力工程技术 medium-voltage converter laminated busbar finite element simulation parasitic parameters insulation sic metal oxide semiconductor field effect transistor (sic mosfet) |
| title | Optimization design of insulation and parasitic parameters for medium-voltage hybrid ANPC busbars |
| title_full | Optimization design of insulation and parasitic parameters for medium-voltage hybrid ANPC busbars |
| title_fullStr | Optimization design of insulation and parasitic parameters for medium-voltage hybrid ANPC busbars |
| title_full_unstemmed | Optimization design of insulation and parasitic parameters for medium-voltage hybrid ANPC busbars |
| title_short | Optimization design of insulation and parasitic parameters for medium-voltage hybrid ANPC busbars |
| title_sort | optimization design of insulation and parasitic parameters for medium voltage hybrid anpc busbars |
| topic | medium-voltage converter laminated busbar finite element simulation parasitic parameters insulation sic metal oxide semiconductor field effect transistor (sic mosfet) |
| url | https://doi.org/10.12158/j.2096-3203.2025.04.006 |
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